Silicon Nanowire MOSFETs and Applications to Non-volatile Memory PDF Download
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Author: Xiaoxiao Zhu
Publisher:
ISBN:
Category : Computer storage devices
Languages : en
Pages : 342
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Book Description
Author: Xiaoxiao Zhu
Publisher:
ISBN:
Category : Computer storage devices
Languages : en
Pages : 342
Get Book Here
Book Description
Author: Hao Zhu
Publisher:
ISBN:
Category : Science
Languages : en
Pages :
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Book Description
Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of the most promising candidates that would make possible building blocks in future nanoscale devices and integrated circuits. Employing nanowire as metal-oxide-semiconductor field-effect transistor (MOSFET) channel can enable a gate-surrounding structure allowing an excellent electrostatic gate control over the channel for reducing the short-channel effects. This chapter introduces the basic physics of semiconductor nanowires and addresses the problem of how to synthesize semiconductor nanowires with low-cost, high-efficiency and bottom-up approaches. Effective integration of nanowires in modern complementary metal-oxide-semiconductor (CMOS) technology, specifically in MOSFET devices, and non-volatile memory applications is also reviewed. By extending the nanowire MOSFET structure into a universal device architecture, various novel semiconductor materials can be investigated. Semiconductor nanowire MOSFETs have been proved to be a strong and useful platform to study the physical and electrical properties of the novel material. In this chapter, we will also review the investigations on topological insulator materials by employing the nanowire field-effect transistor (FET) device structure.
Author: Khan Maaz
Publisher: BoD – Books on Demand
ISBN: 9535132830
Category : Science
Languages : en
Pages : 266
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Book Description
One-dimensional nanostructures, such as nanowires, have drawn extensive research interests in the recent years. The smaller size brings unique properties to the nanowires due to the finite size effect (quantum confinement effects). The unique geometrical features of the nanowires bring their utilization in many practical applications in the recent advanced technology. This book provides an updated review on fabrication, properties, and applications of various nanowires. This book is aimed to provide solid foundation of nanowires to the students, scientists, and engineers working in the field of material science and condensed matter physics.
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author: Barbara de Salvo
Publisher: John Wiley & Sons
ISBN: 1118617800
Category : Technology & Engineering
Languages : en
Pages : 222
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Book Description
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author: Arup Bhattacharyya
Publisher: CRC Press
ISBN: 1351798316
Category : Technology & Engineering
Languages : en
Pages : 566
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Book Description
The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: T. S. Arun Samuel
Publisher: CRC Press
ISBN: 1000877809
Category : Technology & Engineering
Languages : en
Pages : 317
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Book Description
This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications. Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon. The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.
Author: Ahmet Bindal
Publisher: Springer
ISBN: 3319271776
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
Author: Jean-Pierre Colinge
Publisher: Cambridge University Press
ISBN: 1107052408
Category : Science
Languages : en
Pages : 269
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Book Description
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Author: Subhransu Sekhar Dash
Publisher: Springer Nature
ISBN: 9811613354
Category : Technology & Engineering
Languages : en
Pages : 579
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Book Description
This book presents the peer-reviewed proceedings of the Sixth International Conference on Intelligent Computing and Applications (ICICA 2020), held at Government College of Engineering, Keonjhar, Odisha, India, during December 22–24, 2020. The book includes the latest research on advanced computational methodologies such as neural networks, fuzzy systems, evolutionary algorithms, hybrid intelligent systems, uncertain reasoning techniques, and other machine learning methods and their applications to decision-making and problem-solving in mobile and wireless communication networks.
