Silicon Materials-Processing, Characterization and Reliability: Volume 716 PDF Download
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Author: Janice L. Veteran
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 704
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Janice L. Veteran
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 704
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 432
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Book Description
Author: Stephen E. Saddow
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.
Author: Mark I. Gardner
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 408
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Book Description
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Author:
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ISBN:
Category : Ions
Languages : en
Pages : 608
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Book Description
Author: Shufeng Zhang
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
Author: Kenneth J. Shea
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 208
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Book Description
This volume contains the proceedings of two symposia held at the 2002 MRS Spring Meeting in San Francisco. Molecular imprinting (MI) technology has attracted much attention and enjoyed tremendous development over the past decade. MI technology enables the preparation of materials with host sites that recognize specific guest molecules, analogous to the "lock-and-key" paradigm of antibodies and enzymes. Advantages of molecularly imprinted materials include: a degree of specificity approaching that of antibodies but with much greater temporal and thermal stability; rapid development because precise molecular design and chemical synthesis are unnecessary; and wide applicability because materials may be imprinted with almost any shape-persistent analyte of interest. Papers from Symposium M, "Molecularly Imprinted Materials, focus primarily on the fabrication of functional materials and devices based on MI materials. Studies are presented not only by experts in MI, but more importantly, by materials scientists integrating molecular imprinting with cutting-edge techniques in microfabrication and nanotechnology.
Author: Philippe Knauth
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: M. Á. Alario-Franco
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 512
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Book Description
Since its inception in the mid-twentieth century, solid-state chemistry has matured within the chemical sciences. In the same way that chemistry itself is considered a central science, solid-state chemistry is central in its many relations to physics, in particular to solid-state physics and also to materials science and engineering. There are few problems in materials science or engineering in which the preparation of the material itself is not a central issue and, more often than not, this will be a solid-state chemical problem. For these reasons, it is not surprising that in the technological development of the last century, solid-state chemistry has grown in importance. It is not only a synthesis science, it is also the science of structures, defects, stoichiometry, and physical chemical properties. Most of these are explored in the book. Topics include: metal-to-insulator transition; porous materials; dielectric materials; nanomaterials; synthesis of materials; films and catalytic materials; CMR materials; thermoelectric materials; dielectrics, catalysts, phosphors, films and properties and synthesis and crystal growth.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 900
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Book Description
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
