Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 13 & Advanced CMOS-Compatible Semiconductor Devices 20 PDF Download
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Author: H. Jagannathan
Publisher:
ISBN: 9781713875512
Category :
Languages : en
Pages : 0
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Book Description
Author: H. Jagannathan
Publisher:
ISBN: 9781713875512
Category :
Languages : en
Pages : 0
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Book Description
Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1607688689
Category : Science
Languages : en
Pages : 176
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Book Description
This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Author: H. Jagannathan
Publisher:
ISBN: 9781713830504
Category :
Languages : en
Pages : 178
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Book Description
Author: F. Roozeboom
Publisher:
ISBN: 9781713811985
Category :
Languages : en
Pages :
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Book Description
Author: F. Roozeboom
Publisher: The Electrochemical Society
ISBN: 1607688085
Category :
Languages : en
Pages : 279
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Book Description
Author: H. Jagannathan
Publisher:
ISBN: 9781713863397
Category :
Languages : en
Pages : 0
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Book Description
Author: J Pimbley
Publisher: Elsevier
ISBN: 0323156800
Category : Technology & Engineering
Languages : en
Pages : 305
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Book Description
Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.
Author: Durgamadhab Misra
Publisher: The Electrochemical Society
ISBN: 1607688050
Category : Science
Languages : en
Pages : 119
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Book Description
Author: Nadine Collaert
Publisher: Woodhead Publishing
ISBN: 0081020627
Category : Technology & Engineering
Languages : en
Pages : 390
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Book Description
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits
Author: P. J. Timans
Publisher: The Electrochemical Society
ISBN: 1566776260
Category : Gate array circuits
Languages : en
Pages : 488
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Book Description
This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
