Silicon Carbide, III-nitrides and Related Materials PDF Download
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Author: Gerhard Pensl
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 880
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Book Description
Author: Gerhard Pensl
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 880
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 758
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Book Description
This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties. PART 1: 1. SiC BULK GROWTH. 2. SiC EPITAXY. 2.1 Homoepitaxial Growth. 2.2 Heteroepitaxial Growth. 3. THEORY. 4. CHARACTERISATION OF SiC. 4.1 Surfaces and Interfaces. 4.2 Structural Characterisation. 4.3 Optical Characterisation. 4.4 Electrical Characterisation. 4.5 Magnetic Resonance Characterisation. 4.6 Thermal and Mechanical Properties. 5. MEASUREMENT TECHNIQUES. PART 2: 6. PROCESSING OF SiC. 6.1 Doping and Implantation. 6.2 Contacts and Etching. 6.3 Dielectrics. 6.4 Micromachining. 7. SiC DEVICES. 7.1 Surveys. 7.2 Unipolar Devices. 7.3 Bipolar Devices. 7.4 Sensors. 8. GROWTH OF III-NITRIDES. 9. CHARACTERISATION OF III-NITRIDES. 9.1 Structural Characterisation. 9.2 Optical Characterisation. 9.3 Electrical Characterisation. 10. PROCESSING OF III-NITRIDES. 11. III-NITRIDE DEVICES. 12. RELATED MATERIALS.
Author:
Publisher: Academic Press
ISBN: 0080864503
Category : Technology & Engineering
Languages : en
Pages : 435
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Book Description
This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 9781420049671
Category : Technology & Engineering
Languages : en
Pages : 1788
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Book Description
Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Author: Robert Devaty
Publisher:
ISBN: 9783037854198
Category : Crystal growth
Languages : en
Pages : 0
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Book Description
ICSCRM 2011Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Author:
Publisher:
ISBN:
Category : Naval research
Languages : en
Pages : 184
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Book Description
Author: Zhe Feng
Publisher: CRC Press
ISBN: 1040105793
Category : Science
Languages : en
Pages : 172
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Book Description
Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.
Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815232
Category : Science
Languages : en
Pages : 588
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Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author: Henry Helvajian
Publisher: AIAA
ISBN: 9781884989032
Category : Technology & Engineering
Languages : en
Pages : 748
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Book Description
Microengineering Aerospace Systems is a textbook tutorial encompassing MEMS (micro-electromechanical systems), nanoelectronics, packaging, processing, and materials characterization for developing miniaturized smart instruments for aerospace systems (i.e., ASIM application-specific integrated microinstrument), satellites, and satellite subsystems. Third in a series of Aerospace Press publications covering this rapidly advancing technology, this work presents fundamental aspects of the technology and specific aerospace systems applications through worked examples.
