Silicon carbide and related materials - 2005 : [ICSCRM 2005] ; proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 ; Pittsburgh, Pennsylvania, USA ; September 18 - 23, 2005. 2(2006)

Silicon carbide and related materials - 2005 : [ICSCRM 2005] ; proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 ; Pittsburgh, Pennsylvania, USA ; September 18 - 23, 2005. 2(2006) PDF Author: International Conference on Silicon Carbide and Related Materials
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ISBN:
Category :
Languages : en
Pages : 831

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Silicon Carbide and Related Materials 2005

Silicon Carbide and Related Materials 2005 PDF Author: Robert Philip Devaty
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages :

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Silicon Carbide and Related Materials 2005

Silicon Carbide and Related Materials 2005 PDF Author: Robert P. Devaty
Publisher: Trans Tech Publications Ltd
ISBN: 3038130532
Category : Technology & Engineering
Languages : en
Pages : 1670

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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Silicon Carbide and Related Materials - 2005

Silicon Carbide and Related Materials - 2005 PDF Author: Robert P. Devaty
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 878

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Book Description
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Silicon Carbide and Related Materials 2004

Silicon Carbide and Related Materials 2004 PDF Author: Roberta Nipoti
Publisher: Trans Tech Publications Ltd
ISBN: 3038130036
Category : Technology & Engineering
Languages : en
Pages : 1148

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Book Description
Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions.

Silicon Carbide and Related Materials

Silicon Carbide and Related Materials PDF Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 868

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SiC Materials and Devices

SiC Materials and Devices PDF Author: Michael Shur
Publisher: World Scientific
ISBN: 9812703837
Category : Science
Languages : en
Pages : 143

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Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

ICMAT 2005

ICMAT 2005 PDF Author:
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Category :
Languages : en
Pages :

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Silicon Carbide and Related Materials 2013

Silicon Carbide and Related Materials 2013 PDF Author: Hajime Okumura
Publisher: Trans Tech Publications Ltd
ISBN: 3038263915
Category : Technology & Engineering
Languages : en
Pages : 1246

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Book Description
The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

The VLSI Handbook

The VLSI Handbook PDF Author: Wai-Kai Chen
Publisher: CRC Press
ISBN: 1420005960
Category : Technology & Engineering
Languages : en
Pages : 2320

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Book Description
For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.