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Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313526
Category : Technology & Engineering
Languages : en
Pages : 565
Get Book Here
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
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Author: Joshua Cody
Publisher: A&C Black
ISBN: 1408822466
Category : Biography & Autobiography
Languages : en
Pages : 274
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Book Description
Joshua Cody was about to receive his PhD from Columbia University when he was diagnosed with an aggressive cancer. He underwent six months of chemotherapy. The treatment failed. Expectations for survival plummeted. After consulting with several oncologists, he embarked on a risky course of high-dose chemotherapy, full body radiation, and an autologous bone marrow transplant. In a fevered, mesmerising voice, slaloming effortlessly between references to Ezra Pound, The Rolling Stones and Beethoven, in a memoir that is as fresh and beguiling as it is brave and revealing he charts the struggle: the fury, the tendency to self-destruction, the ruthless grasping for life, for sensation. Literary, hallucinatory and at times uncomfortable reading, [sic] is ultimately a celebration of art, language music and life.
Author: Martha Brockenbrough
Publisher: St. Martin's Press
ISBN: 1429985429
Category : Language Arts & Disciplines
Languages : en
Pages : 280
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Book Description
This book is for people who experience heartbreak over love notes with subject-verb disagreements...for anyone who's ever considered hanging up the phone on people who pepper their speech with such gems as "irregardless," "expresso," or "disorientated"...and for the earnest souls who wonder if it's "Woe is Me," or "Woe is I," or even "Woe am I." Martha Brockenbrough's Things That Make Us (Sic) is a laugh-out-loud guide to grammar and language, a snarkier American answer to Lynn Truss's runaway success, Eats, Shoots & Leaves. Brockenbrough is the founder of National Grammar Day and SPOGG -- the Society for the Promotion of Good Grammar -- and as serious as she is about proper usage, her voice is funny, irreverent, and never condescending. Things That Make Us (Sic) addresses common language stumbling stones such as evil twins, clichés, jargon, and flab, and offers all the spelling tips, hints, and rules that are fit to print. It's also hugely entertaining, with letters to high-profile language abusers, including David Hasselhoff, George W. Bush, and Canada's Maple Leafs [sic], as well as a letter to --and a reply from -- Her Majesty, the Queen of England. Brockenbrough has written a unique compendium combining letters, pop culture references, handy cheat sheets, rants, and historical references that is as helpful as it is hilarious.
Author: Melissa James Gibson
Publisher: Dramatists Play Service Inc
ISBN: 9780822218722
Category : Drama
Languages : en
Pages : 140
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Book Description
In adjacent apartments that resemble nothing so much as broom closets with windows, the three young, ambitious neighbors of Melissa James Gibson's "[sic]" come together to discuss, flirt, argue, share their dreams, and plan their futures with unequal degrees of deep hopefulness and abject despair, all the while pushing the limits of their friendship to the max and demonstrating that language can be both an instrument of intimacy and a weapon of defense. Theo is a composer trying to create a heroic theme for an amusement park ride called the Thrill-o-Rama; Babette is a writer who is trying to finish--or even start--a book theorizing that temper tantrums are the major motivating force behind historical events; and Frank is a would-be auctioneer, preparing for his future career by constantly practicing such tongue twisters as "Sally sought some seeds to sow but sadly soon it snowed." By exploring these questing lives in language that alternates between exhilarating structural inventiveness and loony comedy, poignant soul-searching and incisive analysis of the life that may actually exist beyond one's four walls, Melissa James Gibson has created a unique play that is as witty and wise as it is stylistically groundbreaking and unexpected.
Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 3662098776
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century.
Author: A.A. Gippius
Publisher: Elsevier
ISBN: 0444596771
Category : Science
Languages : en
Pages : 392
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Book Description
This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.
Author: Robin Karhu
Publisher: Linköping University Electronic Press
ISBN: 9176851494
Category :
Languages : en
Pages : 55
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Book Description
Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.
Author: United States. Bureau of the Census
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 974
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Book Description
Author: United States. Bureau of the Census
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 616
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Book Description
Author: United States. Bureau of the Census
Publisher:
ISBN:
Category : Exports
Languages : en
Pages : 688
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Book Description
