Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 PDF full book. Access full book title Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610 by Aditya Agarwal. Download full books in PDF and EPUB format.
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Get Book Here
Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Get Book Here
Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Author:
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 320
Get Book Here
Book Description
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
Get Book Here
Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Category : Technology & Engineering
Languages : en
Pages : 472
Get Book Here
Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author: Erin C. Jones
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 362
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566772846
Category : Science
Languages : en
Pages : 720
Get Book Here
Book Description
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566773966
Category : Computers
Languages : en
Pages : 488
Get Book Here
Book Description
Author:
Publisher: DIANE Publishing
ISBN: 142891787X
Category : Photovoltaic power generation
Languages : en
Pages : 335
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 724
Get Book Here
Book Description
Author: Haydn N. G. Wadley
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 274
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
