Author:
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 320
Book Description
Si Front-end Processing
Author:
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 320
Book Description
Publisher:
ISBN:
Category : Semiconductor doping
Languages : en
Pages : 320
Book Description
Si Front-End Processing: Volume 669
Author: Erin C. Jones
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 362
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 362
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448
Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.
Advanced Short-time Thermal Processing for Si-based CMOS Devices
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566773966
Category : Computers
Languages : en
Pages : 488
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773966
Category : Computers
Languages : en
Pages : 488
Book Description
Handbook of Silicon Based MEMS Materials and Technologies
Author: Markku Tilli
Publisher: William Andrew
ISBN: 0323312233
Category : Technology & Engineering
Languages : en
Pages : 827
Book Description
The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures - Geared towards practical applications rather than theory
Publisher: William Andrew
ISBN: 0323312233
Category : Technology & Engineering
Languages : en
Pages : 827
Book Description
The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures - Geared towards practical applications rather than theory
Simulation of Semiconductor Processes and Devices 2001
Author: Dimitris Tsoukalas
Publisher: Springer Science & Business Media
ISBN: 3709162440
Category : Technology & Engineering
Languages : en
Pages : 463
Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Publisher: Springer Science & Business Media
ISBN: 3709162440
Category : Technology & Engineering
Languages : en
Pages : 463
Book Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
The NeuroProcessor
Author: Yevgeny Perelman
Publisher: Springer Science & Business Media
ISBN: 1402087268
Category : Technology & Engineering
Languages : en
Pages : 126
Book Description
Understanding brain structure and principles of operation is one of the major challengesofmodernscience.SincetheexperimentsbyGalvanionfrogmuscle contraction in 1792, it is known that electrical impulses lie at the core of the brain activity. The technology of neuro-electronic interfacing, besides its importance for neurophysiological research, has also clinical potential, so called neuropr- thetics. Sensory prostheses are intended to feed sensory data into patient’s brain by means of neurostimulation. Cochlear prostheses [1] are one example of sensory prostheses that are already used in patients. Retinal prostheses are currently under research [2]. Recent neurophysiological experiments [3, 4] show that brain signals recorded from motor cortex carry information regarding the movement of subject’s limbs (Fig. 1.1). These signals can be further used to control ext- nal machines [4] that will replace missing limbs, opening the ?eld of motor prosthetics, devices that will restore lost limbs or limb control. Fig. 1.1. Robotic arm controlled by monkey motor cortex signals. MotorLab, U- versity of Pittsburgh. Prof Andy Schwartz, U. Pitt 2 1 Introduction Another group of prostheses would provide treatment for brain diseases, such as prevention of epileptic seizure or the control of tremor associated with Parkinson disease [5]. Brain implants for treatment of Epilepsy and Parkinson symptoms (Fig. 1.2) are already available commercially [6, 7]. Fig. 1.2. Implantable device for Epilepsy seizures treatment [7]. Cyberonics, Inc.
Publisher: Springer Science & Business Media
ISBN: 1402087268
Category : Technology & Engineering
Languages : en
Pages : 126
Book Description
Understanding brain structure and principles of operation is one of the major challengesofmodernscience.SincetheexperimentsbyGalvanionfrogmuscle contraction in 1792, it is known that electrical impulses lie at the core of the brain activity. The technology of neuro-electronic interfacing, besides its importance for neurophysiological research, has also clinical potential, so called neuropr- thetics. Sensory prostheses are intended to feed sensory data into patient’s brain by means of neurostimulation. Cochlear prostheses [1] are one example of sensory prostheses that are already used in patients. Retinal prostheses are currently under research [2]. Recent neurophysiological experiments [3, 4] show that brain signals recorded from motor cortex carry information regarding the movement of subject’s limbs (Fig. 1.1). These signals can be further used to control ext- nal machines [4] that will replace missing limbs, opening the ?eld of motor prosthetics, devices that will restore lost limbs or limb control. Fig. 1.1. Robotic arm controlled by monkey motor cortex signals. MotorLab, U- versity of Pittsburgh. Prof Andy Schwartz, U. Pitt 2 1 Introduction Another group of prostheses would provide treatment for brain diseases, such as prevention of epileptic seizure or the control of tremor associated with Parkinson disease [5]. Brain implants for treatment of Epilepsy and Parkinson symptoms (Fig. 1.2) are already available commercially [6, 7]. Fig. 1.2. Implantable device for Epilepsy seizures treatment [7]. Cyberonics, Inc.
Simulation of Semiconductor Processes and Devices 2007
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728600
Category : Computers
Languages : en
Pages : 472
Book Description
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Publisher: Springer Science & Business Media
ISBN: 3211728600
Category : Computers
Languages : en
Pages : 472
Book Description
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Strained-Si Heterostructure Field Effect Devices
Author: C.K Maiti
Publisher: CRC Press
ISBN: 1420012347
Category : Science
Languages : en
Pages : 438
Book Description
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Publisher: CRC Press
ISBN: 1420012347
Category : Science
Languages : en
Pages : 438
Book Description
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
High Purity Silicon
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 724
Book Description
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 724
Book Description