Author: Hao Zhu
Publisher:
ISBN:
Category : Science
Languages : en
Pages :
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Book Description
Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of the most promising candidates that would make possible building blocks in future nanoscale devices and integrated circuits. Employing nanowire as metal-oxide-semiconductor field-effect transistor (MOSFET) channel can enable a gate-surrounding structure allowing an excellent electrostatic gate control over the channel for reducing the short-channel effects. This chapter introduces the basic physics of semiconductor nanowires and addresses the problem of how to synthesize semiconductor nanowires with low-cost, high-efficiency and bottom-up approaches. Effective integration of nanowires in modern complementary metal-oxide-semiconductor (CMOS) technology, specifically in MOSFET devices, and non-volatile memory applications is also reviewed. By extending the nanowire MOSFET structure into a universal device architecture, various novel semiconductor materials can be investigated. Semiconductor nanowire MOSFETs have been proved to be a strong and useful platform to study the physical and electrical properties of the novel material. In this chapter, we will also review the investigations on topological insulator materials by employing the nanowire field-effect transistor (FET) device structure.
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author: Xiaoxiao Zhu
Publisher:
ISBN:
Category : Computer storage devices
Languages : en
Pages : 342
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Book Description
Author: Khan Maaz
Publisher: BoD – Books on Demand
ISBN: 9535132830
Category : Science
Languages : en
Pages : 266
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Book Description
One-dimensional nanostructures, such as nanowires, have drawn extensive research interests in the recent years. The smaller size brings unique properties to the nanowires due to the finite size effect (quantum confinement effects). The unique geometrical features of the nanowires bring their utilization in many practical applications in the recent advanced technology. This book provides an updated review on fabrication, properties, and applications of various nanowires. This book is aimed to provide solid foundation of nanowires to the students, scientists, and engineers working in the field of material science and condensed matter physics.
Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 9814745774
Category : Science
Languages : en
Pages : 549
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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author:
Publisher: Academic Press
ISBN: 0128041447
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. - Includes experts contributors who review the most important recent literature - Contains a broad view, including examination of semiconductor nanowires
Author: Jin He
Publisher:
ISBN: 9789533073187
Category :
Languages : en
Pages :
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Book Description
Author: Kalyan Biswas
Publisher: John Wiley & Sons
ISBN: 1394188951
Category : Technology & Engineering
Languages : en
Pages : 340
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Book Description
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Author: J Arbiol
Publisher: Elsevier
ISBN: 1782422633
Category : Technology & Engineering
Languages : en
Pages : 573
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Book Description
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Author: Jie Xiang
Publisher: Royal Society of Chemistry
ISBN: 1849738157
Category : Science
Languages : en
Pages : 463
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Book Description
A timely reference from leading experts on semiconductor nanowires and their applications.
