Author: Shimeng Yu
Publisher: CRC Press
ISBN: 1000567613
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Author: Shimeng Yu
Publisher: CRC Press
ISBN: 1000567575
Category : Computers
Languages : en
Pages : 214
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Book Description
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Author: William D. Brown
Publisher: Wiley-IEEE Press
ISBN:
Category : Computers
Languages : en
Pages : 624
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Book Description
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1466560614
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: Ashok K. Sharma
Publisher: Wiley-IEEE Press
ISBN: 9780780310001
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including. * Memory cell structures and fabrication technologies. * Application-specific memories and architectures. * Memory design, fault modeling and test algorithms, limitations, and trade-offs. * Space environment, radiation hardening process and design techniques, and radiation testing. * Memory stacks and multichip modules for gigabyte storage.
Author: Cristiano Calligaro
Publisher:
ISBN: 9788770043779
Category : Science
Languages : en
Pages : 0
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Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: ¿ Radiation effects on semiconductor components (TID, SEE)¿ Radiation Hardening by Design (RHBD) Techniques¿ Rad-hard SRAMs¿ Rad-hard PROMs¿ Rad-hard Flash NVMs¿ Rad-hard ReRAMs¿ Rad-hard emerging technologies
Author: Tegze P. Haraszti
Publisher: Springer Science & Business Media
ISBN: 0306470357
Category : Technology & Engineering
Languages : en
Pages : 567
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Book Description
CMOS Memory Circuits is a systematic and comprehensive reference work designed to aid in the understanding of CMOS memory circuits, architectures, and design techniques. CMOS technology is the dominant fabrication method and almost the exclusive choice for semiconductor memory designers. Both the quantity and the variety of complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS memories are traded as mass-products worldwide and are diversified to satisfy nearly all practical requirements in operational speed, power, size, and environmental tolerance. Without the outstanding speed, power, and packing density characteristics of CMOS memories, neither personal computing, nor space exploration, nor superior defense systems, nor many other feats of human ingenuity could be accomplished. Electronic systems need continuous improvements in speed performance, power consumption, packing density, size, weight, and costs. These needs continue to spur the rapid advancement of CMOS memory processing and circuit technologies. CMOS Memory Circuits is essential for those who intend to (1) understand, (2) apply, (3) design and (4) develop CMOS memories.
Author: Kwok K. Ng
Publisher: Wiley-IEEE Press
ISBN: 9780471202400
Category : Technology & Engineering
Languages : en
Pages : 768
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Book Description
A definitive and up-to-date handbook of semiconductor devices Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years. Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are being continually invented. As a result, a large number of types and variations of devices are available in the literature. The Second Edition of this unique engineering guide continues to be the only available complete collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. As in the First Edition, the value of this text lies in its comprehensive, yet highly readable presentation and its easy-to-use format, making it suitable for a wide range of audiences. Essential information is presented for a quick, balanced overview Each chapter is designed to cover only one specific device, for easy and focused reference Each device is discussed in detail, always including its history, its structure, its characteristics, and its applications The Second Edition has been significantly updated with eight new chapters, and the material rearranged to reflect recent developments in the field. As such, it remains an ideal reference source for graduate students who want a quick survey of the field, as well as for practitioners and researchers who need quick access to basic information, and a valuable pragmatic handbook for salespeople, lawyers, and anyone associated with the semiconductor industry.
Author: Kiyoo Itoh
Publisher: Springer Science & Business Media
ISBN: 3662044781
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.
Author: Eddy Simoen
Publisher:
ISBN: 9780750312745
Category : SCIENCE
Languages : en
Pages : 0
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Book Description
"Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.
