Author: Umesh Mishra
Publisher: Springer Science & Business Media
ISBN: 1402064802
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Semiconductor Device Physics and Design
Author: Umesh Mishra
Publisher: Springer Science & Business Media
ISBN: 1402064802
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Publisher: Springer Science & Business Media
ISBN: 1402064802
Category : Technology & Engineering
Languages : en
Pages : 583
Book Description
Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Semiconductor Device Physics and Simulation
Author: J.S. Yuan
Publisher: Springer Science & Business Media
ISBN: 9780306457241
Category : Technology & Engineering
Languages : en
Pages : 352
Book Description
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Publisher: Springer Science & Business Media
ISBN: 9780306457241
Category : Technology & Engineering
Languages : en
Pages : 352
Book Description
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Modern Semiconductor Physics and Device Applications
Author: Vitalii Dugaev
Publisher: CRC Press
ISBN: 1000462293
Category : Science
Languages : en
Pages : 399
Book Description
This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner
Publisher: CRC Press
ISBN: 1000462293
Category : Science
Languages : en
Pages : 399
Book Description
This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science. Key Features: Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals Contains the latest research and developments in the field Written in an accessible yet rigorous manner
Physics of Semiconductor Devices
Author: Massimo Rudan
Publisher: Springer
ISBN: 1493911511
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
Publisher: Springer
ISBN: 1493911511
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
Wide Bandgap Semiconductor Power Devices
Author: B. Jayant Baliga
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Publisher: Woodhead Publishing
ISBN: 0081023073
Category : Technology & Engineering
Languages : en
Pages : 420
Book Description
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Physics and Properties of Narrow Gap Semiconductors
Author: Junhao Chu
Publisher: Springer Science & Business Media
ISBN: 0387748016
Category : Science
Languages : en
Pages : 613
Book Description
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Publisher: Springer Science & Business Media
ISBN: 0387748016
Category : Science
Languages : en
Pages : 613
Book Description
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Physics of Semiconductor Devices
Author: Simon M. Sze
Publisher: John Wiley & Sons
ISBN: 1119429110
Category : Technology & Engineering
Languages : en
Pages : 944
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Publisher: John Wiley & Sons
ISBN: 1119429110
Category : Technology & Engineering
Languages : en
Pages : 944
Book Description
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Semiconductor Material and Device Characterization
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Semiconductor Devices
Author: Kevin M. Kramer
Publisher: Prentice Hall
ISBN:
Category : Business & Economics
Languages : en
Pages : 746
Book Description
CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."
Publisher: Prentice Hall
ISBN:
Category : Business & Economics
Languages : en
Pages : 746
Book Description
CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."
Semiconductor Optoelectronic Devices
Author: Joachim Piprek
Publisher: Elsevier
ISBN: 0080469787
Category : Technology & Engineering
Languages : en
Pages : 296
Book Description
Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices
Publisher: Elsevier
ISBN: 0080469787
Category : Technology & Engineering
Languages : en
Pages : 296
Book Description
Optoelectronics has become an important part of our lives. Wherever light is used to transmit information, tiny semiconductor devices are needed to transfer electrical current into optical signals and vice versa. Examples include light emitting diodes in radios and other appliances, photodetectors in elevator doors and digital cameras, and laser diodes that transmit phone calls through glass fibers. Such optoelectronic devices take advantage of sophisticated interactions between electrons and light. Nanometer scale semiconductor structures are often at the heart of modern optoelectronic devices. Their shrinking size and increasing complexity make computer simulation an important tool to design better devices that meet ever rising perfomance requirements. The current need to apply advanced design software in optoelectronics follows the trend observed in the 1980's with simulation software for silicon devices. Today, software for technology computer-aided design (TCAD) and electronic design automation (EDA) represents a fundamental part of the silicon industry. In optoelectronics, advanced commercial device software has emerged recently and it is expected to play an increasingly important role in the near future. This book will enable students, device engineers, and researchers to more effectively use advanced design software in optoelectronics. - Provides fundamental knowledge in semiconductor physics and in electromagnetics, while helping to understand and use advanced device simulation software - Demonstrates the combination of measurements and simulations in order to obtain realistic results and provides data on all required material parameters - Gives deep insight into the physics of state-of-the-art devices and helps to design and analyze of modern optoelectronic devices