Introduction to Semiconductor Device Modelling PDF Download
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Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author: NANDITA DASGUPTA
Publisher: PHI Learning Pvt. Ltd.
ISBN: 812032398X
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.
Author: Giuseppe Massabrio
Publisher: McGraw Hill Professional
ISBN: 9780071349550
Category : Technology & Engineering
Languages : en
Pages : 500
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Book Description
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 9783211821107
Category : Technology & Engineering
Languages : en
Pages : 382
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Book Description
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Author: J.S. Yuan
Publisher: Springer Science & Business Media
ISBN: 9780306457241
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Author: C. Moglestue
Publisher: Springer Science & Business Media
ISBN: 9401581339
Category : Computers
Languages : en
Pages : 343
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Book Description
Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Author: Fabrizio Bonani
Publisher: Springer Science & Business Media
ISBN: 3662045303
Category : Technology & Engineering
Languages : en
Pages : 241
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Book Description
Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Author: Dietmar Schroeder
Publisher: Springer Science & Business Media
ISBN: 3709166446
Category : Technology & Engineering
Languages : en
Pages : 234
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Book Description
This book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. It combines a review of existing interface charge transport models with original developments, and introduces a unified representation of charge transport at semiconductor interfaces.
Author: Ton J. Mouthaan
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 360
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Book Description
Offers an innovative and accessible new approach to the teaching of the fundamentals of semiconductor components by exploiting simulation to explain the mechanisms behind current in semiconductor structures. Simulation is a popular tool used by engineers and scientists in device and process research and the accompanying two dimensional process and device simulation software 'MicroTec', enables students to make their own devices and allows the recreation of real performance under varying parameters. There is also an accompanying ftp site containing ICECREAM software (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) which improves understanding of the physics involved and covers semiconductor physics, junction diodes, silicon bipolar and MOS transistors and photonic devices like LEDs and lasers. Features include: * MicroTec diskette containing a two-dimensional process and device simulator on which the many simulation exercises mentioned in the text can be performed thereby facilitating learning through experimentation * Computer aided education software (accessible vita ftp) featuring question and answer games, which enables students to enhance their understanding of the physics involved and allows lecturers to set assignments * Broad coverage spanning the common devices: pn junctions, metal semiconductor junctions, photocells, lasers, bipolar transistors, and MOS transistors * Discussion of fundamental concepts and technological principles offering the student a valuable grounding in semiconductor physics * Examination of the implications of recent research on small dimensions, reliability problems and breakdown mechanisms. Semiconductor Devices Explained offers a comprehensive new approach to teaching the fundamentals of semiconductor components based on the use of the accompanying process and device simulation software. Simulation is a popular tool used by engineers and scientists in device and process research. It supports the understanding of basic phenomena by linking the theory to hands on applications and real world problems with semiconductor devices. Throughout the text students are encouraged to augment their understanding by undertaking simulations and creating their own devices. The ICECREAM programme (Integrated Circuits and Electronics group Computerized Remedial Education And Mastering) question and answer game leads students through the concepts of common devices and makes learning fun. There is also a self-test element in which a data bank generates questions on the fundamentals of semiconductor junctions enabling students to assess their progress. Larger projects suitable for use as examination assignments are also incorporated. The test package is freely available to lecturers from the author on request. The remedial component of ICECREAM is available from the Wiley ftp site. MicroTec comes on a disk in the back of the book.
Author: Andreas Schenk
Publisher: Springer Science & Business Media
ISBN: 9783211830529
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal
