Author: Angelo Mascarenhas
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 408

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Thomas H. Myers
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1070

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Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.

Author: Antonios Gonis
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 474

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Book Description
One of the goals of materials science is to design alloys with pre-specified desirable technological properties. To achieve this goal, it is necessary to have a thorough understanding of the fundamental mechanisms underlying materials behavior. In particular, one must understand the effects on alloy properties caused by intentional changes in concentration and how the combinations of temperature, time and uncontrollable foreign impurities affect microstructure. In addition to the equilibrium phase information contained in phase diagrams, nonequilibrium dynamic processes and metastable phases are known to be crucial in determining materials properties. This volume brings together researchers working on various aspects of nonequilibrium processes in materials to discuss current research issues and to provide guidelines for future work. Particular attention was paid to understanding particle nucleation and growth, both experimentally and theoretically, solid-state reactions, nanosystems, liquid-solid transformations, and solidification and amorphization. On the theoretical side, fundamental principles governing nucleation and growth, and related phenomena such as coarsening and Ostwald ripening, are discussed. Progress is also reported on the phase field method and on Monte Carlo simulations.

Author:
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 576

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 608

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Author:
Publisher: DIANE Publishing
ISBN: 142891787X
Category : Photovoltaic power generation
Languages : en
Pages : 335

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Book Description

Author: Margrit Hanbücken
Publisher: John Wiley & Sons
ISBN: 3527639551
Category : Technology & Engineering
Languages : en
Pages : 354

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Book Description
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.

Author: J. Mirecki Millunchick
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 360

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Aditya Agarwal
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 448

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Book Description
This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Author:
Publisher:
ISBN:
Category : Detectors
Languages : en
Pages : 384

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Book Description