Selective Epitaxy of Silicon at Low Temperatures PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Selective Epitaxy of Silicon at Low Temperatures PDF full book. Access full book title Selective Epitaxy of Silicon at Low Temperatures by Jen-Chung Lou. Download full books in PDF and EPUB format.
Author: Jen-Chung Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Get Book Here
Book Description
Author: Jen-Chung Lou
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
Get Book Here
Book Description
Author: Tri-Rung Yew
Publisher:
ISBN:
Category :
Languages : en
Pages : 420
Get Book Here
Book Description
Author: Matthew Mark Sztelle
Publisher:
ISBN: 9780549911173
Category :
Languages : en
Pages : 140
Get Book Here
Book Description
A technique for providing low-temperature, nanometer scale, selective silicon epitaxy using the hydrogen-passivated silicon surface as a lithographic mask has been developed. The STM tip is used to define chemically reactive templates on the monohydride Si(100) surface at temperatures below the monohydride desorption peak, 540 °C. Disilane gas is used to deposit silicon and silicon-hydride species on the exposed clean silicon. For low temperatures (177 °C) or high disilane pressures (1.0x10-8 Torr) the STM tip can be used to remove hydrogen, allowing epitaxy to occur and a fresh silicon surface to be exposed. Repeating this cycle promotes epitaxial growth. At higher temperatures (>177 °C) and lower disilane pressures (≤2.5x10 -9 Torr) short-clean silicon islands form without requiring the STM tip to remove hydrogen in the patterned regions at temperatures below the dihydride desorption peak, 425 °C, thereby adding a processing variable. At sufficient temperatures (310 °C), silicon field-evaporated from the tip may form into an epitaxial film; using this technique, a bilayer of epitaxial growth is demonstrated. The STM tip is used to modify the edges of this structure through the hydrogen removal and selective deposition technique. Also discussed will be the reasonable temperature limits for pattern fidelity.
Author: Katherine Elizabeth Violette
Publisher:
ISBN:
Category :
Languages : en
Pages : 502
Get Book Here
Book Description
Author: Daniel Joseph Connelly
Publisher:
ISBN:
Category :
Languages : en
Pages : 350
Get Book Here
Book Description
Author: Ibrahim Ban
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 618
Get Book Here
Book Description
Author: Yangchin Shih
Publisher:
ISBN:
Category :
Languages : en
Pages : 394
Get Book Here
Book Description
Author: Weichung Wang
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 96
Get Book Here
Book Description
Since average ideality factors, leakage currents, breakdown voltages, and current gains extracted from 970C̊-40T SEG devices were similar to those of substrate devices, the material quality of the SEG deposited at 970C̊ and 40 torr was indicated to be as good as the bulk silicon."
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066862
Category : Technology & Engineering
Languages : en
Pages : 264
Get Book Here
Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: Guilei Wang
Publisher: Springer Nature
ISBN: 9811500460
Category : Technology & Engineering
Languages : en
Pages : 115
Get Book Here
Book Description
This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
