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Author: H. Neddermeyer
Publisher:
ISBN:
Category :
Languages : de
Pages : 22
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Author: H. Neddermeyer
Publisher:
ISBN:
Category :
Languages : de
Pages : 22
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Book Description
Author: Hans-Joachim Güntherodt
Publisher: Springer Science & Business Media
ISBN: 3642973434
Category : Science
Languages : en
Pages : 252
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Book Description
Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating technique that produces beautiful images of nature on an atomic scale. It is the first of three volumes that together offer a comprehensive treatment of scanning tunneling microscopy, its diverse applications, and its theoretical treatment. In this volume the reader will find a detailed description of the technique itself and of its applications to metals, semiconductors, layered materials, adsorbed molecules and superconductors. In addition to the many representative results reviewed, extensive references to original work will help to make accessible the vast body of knowledge already accumulated in this field.
Author: Hans-Joachim Güntherodt
Publisher: Springer Science & Business Media
ISBN: 3642792553
Category : Science
Languages : en
Pages : 288
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Book Description
Since the first edition of "Scanning 'funneling Microscopy I" has been pub lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at the atomic level. The conceptual simplicity of the STM technique is startling: bringing a sharp needle to within a few Angstroms of the surface of a conducting sample and using the tunneling cur rent, which flows on application of a bias voltage, to sense the atomic and elec tronic surface structure with atomic resolution! Prior to 1981 considerable scepticism existed as to the practicability of this approach.
Author:
Publisher:
ISBN:
Category : Scanning tunneling microscopy
Languages : en
Pages : 300
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Author: Frederick Michael Leibsle
Publisher:
ISBN:
Category :
Languages : en
Pages : 296
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Scanning tunneling microscopy (STM), photoemission spectroscopy, and a variety of other experimental techniques have been used to examine both the initial stages of interface formation between various adsorbates, as well as, reconstructions occurring on the clean surfaces of Si and Ge. The initial stages of oxidation of the Si(111)-(7 x 7) and Ge(111)-c(2 x 8) surfaces were studied. Images of the same area of each surface were obtained from various exposures of oxygen. On the Si(111)-(7 x 7) surface, the results show that defect sites act as nucleation centers for the oxidation process. On the Ge(111)-c(2 x 8) surface, images of the surface for exposures of oxygen up to 1600 Langmuirs were obtained. The results show that the oxidized portions of the surface grow as islands which expand preferentially in the (112) direction. The "16 structure" and c(8 x 10) reconstructions occurring on the clean Ge(110) surfaces were examined. STM images show that the Ge(110)-"16 structure" reconstructed surface is composed of ordered facets as predicted by a low-energy-electron diffraction study. STM images of the Ge(110)-c(8 x 10) surface show that the unit cell is composed of alternating oblique sub-unit cells. Photoemission spectra of the Ge 3d core levels for both these surfaces show the presence of multiple surface-shifted components. Sb deposition on these surfaces has also been studied. Sb deposition results in the formation of a (1 x 1) or (3 x 2) ordered over-layer depending on the substrate temperature and Sb coverage. Both these surfaces have been observed with STM. Photoemission results for various coverages of Sb show that the surface-shifted components of the Ge 3d core level are suppressed by the deposition of Sb. A structural model, consistent with the data, for the (1 x 1) Sb-terminated surface is presented. Angle-resolved photoemission spectroscopy was used to measure the bulk band-dispersion relations along the high symmetry $Gamma$-$Sigma$-X directions for both Ge and Si.
Author: Chunli Bai
Publisher: Springer Science & Business Media
ISBN: 9783540657156
Category : Medical
Languages : en
Pages : 392
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Book Description
This book presents a unified view of the rapidly growing field of scanning tunneling microscopy and its many derivatives. After examining novel scanning-probe techniques and the instrumentation and methods, the book provides detailed accounts of STM applications. It examines limitations of the present-day investigations and provides insight into further trends. "I strongly recommend that Professor Bai's book be a part of any library that serves surface scientists, biochemists, biophysicists, material scientists, and students of any science or engineering field...There is no doubt that this is one of the better (most thoughtful) texts." Journal of the American Chemical Society (Review of 1/e)
Author: H. Neddermeyer
Publisher: Springer Science & Business Media
ISBN: 9401118124
Category : Science
Languages : en
Pages : 275
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Book Description
The publication entitled "Surface Studies by Scanning Tunneling Mi Rl croscopy" by Binnig, Rohrer, Gerber and Weibel of the IBM Research Lab oratory in Riischlikon in 1982 immediately raised considerable interest in the sur face science community. It was demonstrated in Reference R1 that images from atomic structures of surfaces like individual steps could be obtained simply by scanning the surface with a sharp metal tip, which was kept in a constant distance of approximately 10 A from the sample surface. The distance control in scanning tunneling microscopy (STM) was realized by a feedback circuit, where the electri cal tunneling current through the potential barrier between tip and sample is used for regulating the tip position with a piezoelectric xyz-system. A similar experi mental approach has already been described by Young et al. for the determination l of the macroscopic roughness of a surface. A number of experimental difficulties had to be solved by the IBM group until this conceptual simple microscopic method could be applied successfully with atomic resolution. Firstly, distance and scanning control of the tip have to be operated with sufficient precision to be sensitive to atomic structures. Secondly, sample holder and tunneling unit have to be designed in such a way that external vibrations do not influence the sample-tip distance and that thermal or other drift effects become small enough during measurement of one image.
Author: R.J. Behm
Publisher: Springer Science & Business Media
ISBN: 9401578710
Category : Science
Languages : en
Pages : 516
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Proceedings of the NATO Advanced Study Institute on Basic Concepts and Applications of Scanning Tunneling Microscopy, Erice, Italy, April 17-29, 1989
Author: Hans-Joachim Güntherodt
Publisher: Springer
ISBN: 9783540584155
Category : Science
Languages : en
Pages : 280
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Book Description
Since the first edition of "Scanning 'funneling Microscopy I" has been pub lished, considerable progress has been made in the application of STM to the various classes of materials treated in this volume, most notably in the field of adsorbates and molecular systems. An update of the most recent develop ments will be given in an additional Chapter 9. The editors would like to thank all the contributors who have supplied up dating material, and those who have provided us with suggestions for further improvements. We also thank Springer-Verlag for the decision to publish this second edition in paperback, thereby making this book affordable for an even wider circle of readers. Hamburg, July 1994 R. Wiesendanger Preface to the First Edition Since its invention in 1981 by G. Binnig, H. Rohrer and coworkers at the IBM Zurich Research Laboratory, scanning tunneling microscopy (STM) has devel oped into an invaluable surface analytical technique allowing the investigation of real-space surface structures at the atomic level. The conceptual simplicity of the STM technique is startling: bringing a sharp needle to within a few Angstroms of the surface of a conducting sample and using the tunneling cur rent, which flows on application of a bias voltage, to sense the atomic and elec tronic surface structure with atomic resolution! Prior to 1981 considerable scepticism existed as to the practicability of this approach.
Author: David Mark Zeglinski
Publisher:
ISBN:
Category :
Languages : en
Pages : 292
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Book Description
