Scanning Tunneling Microscopy and Photoelectron Spectroscopy Studies of Si(111) and Ge(111) Surfaces : Clean and Modified by H Or Sn Atoms PDF Download
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Author:
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ISBN: 9789173937054
Category :
Languages : en
Pages : 137
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Author:
Publisher:
ISBN: 9789173937054
Category :
Languages : en
Pages : 137
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Author: Mats Göthelid
Publisher:
ISBN:
Category :
Languages : en
Pages : 42
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Author: Mats Göthelid
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
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Author: Weiming Liu
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ISBN:
Category :
Languages : en
Pages :
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Author: Howard W. Pickering
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
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Scanning tunneling microscopy (STM) is known to readily resolve the surface electronic structure and topography at the atomic level of many materials. In addition, it has recently been shown that the relative reactivity of the surface atomic sites of the substrate with atoms of an environment can also be studies at the atomic level, i.e., atomic scale site-selective interactions can be resolve and characterized by STM. In the present paper, the atomic scale reaction of hydrogen with the silicon (111) 7x7 surface is successfully illustrated and the interesting result is obtained that the monohydride silicon-hydrogen phase is the stable surface on the clean Si(111) 7x7 surface. Keywords: Hydrogen adsorption; Reprints. (AW).
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2566
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Author: Marc Fouchier
Publisher:
ISBN:
Category : Germanium
Languages : en
Pages : 362
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Author: Michael Bowker
Publisher: John Wiley & Sons
ISBN: 9783527628834
Category : Science
Languages : en
Pages : 258
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Here, top international authors in the field of STM and surface science present first-class contributions on this hot topic, bringing the reader up to date with the latest developments in this rapidly advancing field. The focus is on the nanoscale, particularly in relation to catalysis, involving developments in our understanding of the nature of the surfaces of oxides and nanoparticulate materials, as well as adsorption, and includes in-situ studies of catalysis on such model materials. Of high interest to practitioners of surface science, nanoscience, STM and catalysis.
Author: Frederick Michael Leibsle
Publisher:
ISBN:
Category :
Languages : en
Pages : 296
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Scanning tunneling microscopy (STM), photoemission spectroscopy, and a variety of other experimental techniques have been used to examine both the initial stages of interface formation between various adsorbates, as well as, reconstructions occurring on the clean surfaces of Si and Ge. The initial stages of oxidation of the Si(111)-(7 x 7) and Ge(111)-c(2 x 8) surfaces were studied. Images of the same area of each surface were obtained from various exposures of oxygen. On the Si(111)-(7 x 7) surface, the results show that defect sites act as nucleation centers for the oxidation process. On the Ge(111)-c(2 x 8) surface, images of the surface for exposures of oxygen up to 1600 Langmuirs were obtained. The results show that the oxidized portions of the surface grow as islands which expand preferentially in the (112) direction. The "16 structure" and c(8 x 10) reconstructions occurring on the clean Ge(110) surfaces were examined. STM images show that the Ge(110)-"16 structure" reconstructed surface is composed of ordered facets as predicted by a low-energy-electron diffraction study. STM images of the Ge(110)-c(8 x 10) surface show that the unit cell is composed of alternating oblique sub-unit cells. Photoemission spectra of the Ge 3d core levels for both these surfaces show the presence of multiple surface-shifted components. Sb deposition on these surfaces has also been studied. Sb deposition results in the formation of a (1 x 1) or (3 x 2) ordered over-layer depending on the substrate temperature and Sb coverage. Both these surfaces have been observed with STM. Photoemission results for various coverages of Sb show that the surface-shifted components of the Ge 3d core level are suppressed by the deposition of Sb. A structural model, consistent with the data, for the (1 x 1) Sb-terminated surface is presented. Angle-resolved photoemission spectroscopy was used to measure the bulk band-dispersion relations along the high symmetry $Gamma$-$Sigma$-X directions for both Ge and Si.
Author:
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ISBN:
Category : Physics
Languages : en
Pages : 1058
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