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Author: Jawar Singh
Publisher: Springer Science & Business Media
ISBN: 1461408180
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Author: Jawar Singh
Publisher: Springer Science & Business Media
ISBN: 1461408180
Category : Technology & Engineering
Languages : en
Pages : 176
Get Book Here
Book Description
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Author: Jawar Singh
Publisher: Springer
ISBN: 9781493902446
Category : Technology & Engineering
Languages : en
Pages : 168
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Book Description
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Author: Andrei Pavlov
Publisher: Springer Science & Business Media
ISBN: 1402083637
Category : Technology & Engineering
Languages : en
Pages : 203
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Book Description
The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.
Author: Mohamed Abu Rahma
Publisher: Springer Science & Business Media
ISBN: 1461417481
Category : Technology & Engineering
Languages : en
Pages : 176
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Book Description
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Author: Anand D. Darji
Publisher: Springer Nature
ISBN: 9811967806
Category : Technology & Engineering
Languages : en
Pages : 293
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Book Description
This book presents select peer-reviewed proceedings of the 2nd International Conference on Advances in VLSI and Embedded Systems (AVES 2021). This book covers cutting-edge original research in VLSI design, devices and emerging technologies, embedded systems, and CAD for VLSI. To address the demand for complex and high-functionality systems as well as portable consumer electronics, the contents focus on advanced topics of circuit and systems design, fabrication, testing, and standardization. This book is useful for students, researchers as well as industry professionals interested in emerging trends in VLSI and embedded systems.
Author: S. Rajaram
Publisher: Springer
ISBN: 9811359504
Category : Computers
Languages : en
Pages : 728
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Book Description
This book constitutes the refereed proceedings of the 22st International Symposium on VLSI Design and Test, VDAT 2018, held in Madurai, India, in June 2018. The 39 full papers and 11 short papers presented together with 8 poster papers were carefully reviewed and selected from 231 submissions. The papers are organized in topical sections named: digital design; analog and mixed signal design; hardware security; micro bio-fluidics; VLSI testing; analog circuits and devices; network-on-chip; memory; quantum computing and NoC; sensors and interfaces.
Author: Shubham Tayal
Publisher: John Wiley & Sons
ISBN: 1394166419
Category : Technology & Engineering
Languages : en
Pages : 325
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Book Description
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Author: Alice Wang
Publisher: Springer Science & Business Media
ISBN: 0387345019
Category : Technology & Engineering
Languages : en
Pages : 218
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Book Description
Based on the work of MIT graduate students Alice Wang and Benton Calhoun, this book surveys the field of sub-threshold and low-voltage design and explores such aspects of sub-threshold circuit design as modeling, logic and memory circuit design. One important chapter of the book is dedicated to optimizing energy dissipation - a key metric for energy constrained designs. This book also includes invited chapters on the subject of analog sub-threshold circuits.
Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Author: Baker Mohammad
Publisher: Springer Science & Business Media
ISBN: 1461488818
Category : Technology & Engineering
Languages : en
Pages : 104
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Book Description
This book describes the various tradeoffs systems designers face when designing embedded memory. Readers designing multi-core systems and systems on chip will benefit from the discussion of different topics from memory architecture, array organization, circuit design techniques and design for test. The presentation enables a multi-disciplinary approach to chip design, which bridges the gap between the architecture level and circuit level, in order to address yield, reliability and power-related issues for embedded memory.
