Author: John Reuben
Publisher: John Reuben
ISBN: 3000778489
Category : Technology & Engineering
Languages : en
Pages : 163
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Book Description
This book is written as an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This book is based on the author's peer-reviewed research conducted at the Chair of Computer Architecture, FAU, Germany. Referring to his research and the most relevant research from the literature, the author presents the developments in this field concisely. The purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence, this book is written for university students considering a career in the semiconductor industry. Since the author's research was conducted in collaboration with a silicon foundry, hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is the basic substrate for such computing paradigms. This three-part book condenses the research and development of the last decade into eight chapters. In Part I, a good foundation is laid for understanding the individual device structure, its electrical characteristics, and modeling methodology. The different array configurations in which these memory devices are fabricated are also discussed. In Part II, the peripheral circuits -the CMOS circuits around the ReRAM array are discussed. They include sense amplifiers, programming circuits, and row/column access circuits. Recent developments such as the possibility to perform certain computing tasks in the ReRAM array are discussed in Part III.
Author: Shimeng Yu
Publisher: Springer Nature
ISBN: 3031020308
Category : Technology & Engineering
Languages : en
Pages : 71
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Book Description
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Author: Yao-Feng Chang
Publisher: BoD – Books on Demand
ISBN: 0854661670
Category : Technology & Engineering
Languages : en
Pages : 204
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Book Description
This book presents excellent comprehensive and interdisciplinary research on memristor devices and their corresponding applications. The authors discuss a wide range of topics, including material and physical modeling, materials physics and analytics, devices in miniature scale, advanced functional circuits, high-speed computing systems and integration for logic applications, other novel emerging device concepts and circuit schemes, and much more.
Author: Balwinder Raj
Publisher: Elsevier
ISBN: 0323998119
Category : Technology & Engineering
Languages : en
Pages : 254
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Book Description
Nanoscale Memristor Device and Circuits Design provides theoretical frameworks, including (i) the background of memristors, (ii) physics of memristor and their modeling, (iii) menristive device applications, and (iv) circuit design for security and authentication. The book focuses on a broad aspect of realization of these applications as low cost and reliable devices. This is an important reference that will help materials scientists and engineers understand the production and applications of nanoscale memrister devices. A memristor is a two-terminal memory nanoscale device that stores information in terms of high/low resistance. It can retain information even when the power source is removed, i.e., "non-volatile." In contrast to MOS Transistors (MOST), which are the building blocks of all modern mobile and computing devices, memristors are relatively immune to radiation, as well as parasitic effects, such as capacitance, and can be much more reliable. This is extremely attractive for critical safety applications, such as nuclear and aerospace, where radiation can cause failure in MOST-based systems. - Outlines the major principles of circuit design for nanoelectronic applications - Explores major applications, including memristor-based memories, sensors, solar cells, or memristor-based hardware and software security applications - Assesses the major challenges to manufacturing nanoscale memristor devices at an industrial scale
Author: Hai Li
Publisher: CRC Press
ISBN: 1351834193
Category : Computers
Languages : en
Pages : 207
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Book Description
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.
Author: Yangyuan Wang
Publisher: Springer Nature
ISBN: 9819928362
Category : Technology & Engineering
Languages : en
Pages : 2006
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Book Description
Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.
Author: Chong-Min Kyung
Publisher: Springer
ISBN: 3319332015
Category : Technology & Engineering
Languages : en
Pages : 517
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Book Description
This book describes the technology used for effective sensing of our physical world and intelligent processing techniques for sensed information, which are essential to the success of Internet of Things (IoT). The authors provide a multidisciplinary view of sensor technology from materials, process, circuits, and big data domains and showcase smart sensor systems in real applications including smart home, transportation, medical, environmental, agricultural, etc. Unlike earlier books on sensors, this book provides a “global” view on smart sensors covering abstraction levels from device, circuit, systems, and algorithms.
Author: Christophe Labbé
Publisher: Springer
ISBN: 9811071918
Category : Technology & Engineering
Languages : en
Pages : 246
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Book Description
This book gathers a collection of papers by international experts that were presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2016). ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro materials and devices. Highlighting the latest research on nanoelectronic materials and devices, the book offers a valuable guide for researchers, practitioners and students working in the core areas of functional electronics nanomaterials, nanocomposites for energy application, sensing and high strength materials and simulation of novel device design structures for ultra-low power applications.
Author: Sudeep Pasricha
Publisher: Springer Nature
ISBN: 303119568X
Category : Technology & Engineering
Languages : en
Pages : 418
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Book Description
This book presents recent advances towards the goal of enabling efficient implementation of machine learning models on resource-constrained systems, covering different application domains. The focus is on presenting interesting and new use cases of applying machine learning to innovative application domains, exploring the efficient hardware design of efficient machine learning accelerators, memory optimization techniques, illustrating model compression and neural architecture search techniques for energy-efficient and fast execution on resource-constrained hardware platforms, and understanding hardware-software codesign techniques for achieving even greater energy, reliability, and performance benefits.
Author: Tae-Ho Lee
Publisher: Springer
ISBN: 9811325359
Category : Technology & Engineering
Languages : en
Pages : 116
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Book Description
This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices. However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth. This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.
