Reduction in the Thermal Budget of Sputtered Indium Tin Oxide (ITO) to Potentially Broaden Its Use in Microelectronic Devices PDF Download
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Author: Zachary Flowers
Publisher:
ISBN:
Category : Indium tin oxide
Languages : en
Pages : 0
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Author: Zachary Flowers
Publisher:
ISBN:
Category : Indium tin oxide
Languages : en
Pages : 0
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Author: Oleksandr Malik
Publisher:
ISBN:
Category : Technology
Languages : en
Pages :
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Book Description
High-quality indium tin oxide (ITO) films have been fabricated using a DC sputtering technique in a pure argon atmosphere with a postannealing in an oxygen environment at atmosphere pressure. Structural, morphological, and electro-optical parameters of the ITO films were studied at different annealing temperatures for the films fabricated on two types of glass substrates, soda lime and alkali-free substrates. A comparative analysis shows that low-cost soda lime substrates are suitable for the fabrication of high-quality nanocrystalline ITO films after annealing them at 300°C. This result is of great importance for reducing the cost of thin film solar cells, in which ITO films serve as transparent conducting electrodes. We present a comparison of the properties of sputtered ITO films with those fabricated using a spray pyrolysis deposition technique, which is useful for some optoelectronic applications.
Author: Mohamad Helmi Abd. Mubin
Publisher:
ISBN:
Category : Thin films
Languages : en
Pages : 63
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Author: P. Pokela
Publisher:
ISBN:
Category :
Languages : en
Pages : 8
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Author: Asim K. Ray
Publisher: John Wiley & Sons
ISBN: 1119529476
Category : Technology & Engineering
Languages : en
Pages : 628
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Book Description
Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Author: Steve Durbin
Publisher: Materials Research Society
ISBN: 9781605116105
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.
Author: Nobuo Tsuda
Publisher: Springer Science & Business Media
ISBN: 3662026686
Category : Technology & Engineering
Languages : en
Pages : 334
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Book Description
This book is a revised and up-dated translation of Denki DendOsei Sankabutsu (Electronic Conduction in Oxides) published by Shokabo in Tokyo in 1983 as the second volume of the Material Science Series, which was edited for postgraduate students by T. Suzuki, S. Chikazumi, and S. Nakajima. Since the publication of the first edition, we have witnessed the historic discovery of high-Tc superconductors by J. G. Bednorz and K. A. Müller. Tbe Shokabo edition has thus been thoroughly revised to accommodate the recent developments, and K. Nasu joined as the fourth author. The constitution of the book is as follows: After a short introductory chapter, Chap. 2 is devoted 10 a brief review of transport phenomena and electronic states in oxides. It was written by Tsuda. In Chap. 3, the electron-phonon and electron electron interaction are treated theoretically by Nasu and Yanase. Nasu discusses the present status of theoretical studies of the electron-phonon interaction in solids and Yanase explains the electron correlation. Chapter 4 treats the physics ofvarious representative oxides in detail. Sections 4. 1-5 and 4. 10 were written by Tsuda and Sects. 4. 6-9 by Siratori. This chapter is intended not as an exhaustive review of the properties of each oxide, but rather as an illustration of the concepts which have developed out of the research into transport phenomena in conductive oxides. Many of these concepts are due 10 N. F. Mott. At the end of Chap.
Author: Tze-Chien Sum
Publisher: John Wiley & Sons
ISBN: 3527341110
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
Real insight from leading experts in the field into the causes of the unique photovoltaic performance of perovskite solar cells, describing the fundamentals of perovskite materials and device architectures. The authors cover materials research and development, device fabrication and engineering methodologies, as well as current knowledge extending beyond perovskite photovoltaics, such as the novel spin physics and multiferroic properties of this family of materials. Aimed at a better and clearer understanding of the latest developments in the hybrid perovskite field, this is a must-have for material scientists, chemists, physicists and engineers entering or already working in this booming field.
Author: David Levy
Publisher: John Wiley & Sons
ISBN: 3527342079
Category : Technology & Engineering
Languages : de
Pages : 390
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Book Description
Edited by well-known pioneers in the field, this handbook and ready reference provides a comprehensive overview of transparent conductive materials with a strong application focus. Following an introduction to the materials and recent developments, subsequent chapters discuss the synthesis and characterization as well as the deposition techniques that are commonly used for energy harvesting and light emitting applications. Finally, the book concludes with a look at future technological advances. All-encompassing and up-to-date, this interdisciplinary text runs the gamut from chemistry and materials science to engineering, from academia to industry, and from fundamental challenges to readily available applications.
Author: Uwe Schroeder
Publisher: Woodhead Publishing
ISBN: 0081024312
Category : Technology & Engineering
Languages : en
Pages : 572
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Book Description
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
