Real-Time Spectroscopic Ellipsometry as an In-Situ Diagnostic for Hot-Wire CVD Growth of Amorphous and Epitaxial Si PDF Download
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Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
Author: T. Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 5
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Book Description
Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon heterojunction (SHJ) solar cells and thin epitaxial layers of crystal silicon (epi-Si). For SHJ solar cells, RTSE provides real-time thickness information and rapid feedback on the degree of crystallinity of the thin intrinsic layers used to passivate the crystal silicon (c-Si) wafers. For epi-Si growth, RTSE provides real-time feedback on the crystallinity and breakdown of the epitaxial growth process. Transmission electron microscopy (TEM) has been used to verify the RTSE analysis of thickness and crystallinity. In contrast to TEM, RTSE provides feedback in real time or same-day, while TEM normally requires weeks. This rapid feedback has been a key factor in the rapid progress of both the SHJ and epi-Si projects.
Author: Leo Anthony Almeida
Publisher:
ISBN:
Category :
Languages : en
Pages : 192
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Author:
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ISBN:
Category :
Languages : en
Pages : 38
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This is the final technical report for the three year DARPA--URI program 'Growth Studies of CVD-MBE by in-situ Diagnostics'. The goals of the program were to develop non-invasive, real time epitaxial growth monitoring techniques and combine them to gain an understanding of processes that occur during MBE growth from gas sources. We have adapted these techniques to a commercially designed gas source MBE system (Vacuum Generators Inc.) to facilitate technology transfer out of the laboratory into industrial environments. The in-situ measurement techniques of spectroscopic ellipsometry (SE) and laser induced fluorescence (LIF) have been successfully implemented to monitor the optical and chemical properties of the growing epitaxial film and the gas phase reactants. The ellipsometer was jointly developed with the J. Woolam Co. and has become a commercial product. The temperature dependence of group III and V desorption from GaAs and InP has been measured as well as the incident effusion cell fluxes. The temporal evolution of the growth has also been measured both by SE and LIF to show the smoothing of heterojunction surfaces during growth interruption. Complicated microcavity optical device structures have been monitored by ellipsometry in real time to improve device quality. This data has been coupled with the structural information obtained from reflection high energy electron diffraction (RHEED) to understand the growth processes in binary and ternary bulk III-V semiconductors and heterojunctions.
Author: Zhiquan Huang
Publisher:
ISBN:
Category : Ellipsometry
Languages : en
Pages : 467
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Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si:H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.
Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 0080533825
Category : Technology & Engineering
Languages : en
Pages : 1915
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This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Author:
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Category : Electrical engineering
Languages : en
Pages : 1360
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ISBN:
Category :
Languages : en
Pages : 157
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The primary goal of this contract develop a real-time monitoring capability for HgCdTe composition during MBE growth. This goal was realized by demonstrating a + or - 0.001 accuracy in the composition values determined by the Spectroscopic Ellipsometry (SE) in situ sensor, which was confirmed by exsitu FTIR measurements. Attaining this level of success required significant improvements in the ellipsometer system hardware and data analysis software, the creation of accurate optical constant libraries for the CdZnTe Substrate and HgCdTe film materials, and the development of a systematic methodology for acquiring and analyzing insitu SE data in the MBE growth environment. These improvements and developments are part of an extensive 'knowledge base' which evolved throughout this contract, and is encapsulated in this report. This knowledge base is not specific only to HgCdTe growth; it is also directly relevant to the insitu SE monitoring of any epitaxial semiconductor growth process. In addition to the HgCdTe composition monitoring capabilities, insitu SE was also found to be very useful in monitoring the temperature and the surface condition of the CdZnTe substrate before growth, surface roughening during the initiation of HgCdTe growth, and the surface morphology during ECR etching of HgCdTe films.
Author:
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Category : Electrical engineering
Languages : en
Pages : 1576
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Category : Physics
Languages : en
Pages : 812
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Author: M. H. W. Verbruggen
Publisher:
ISBN: 9789052821801
Category :
Languages : en
Pages : 92
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