Rare Earth Doped III-V Semiconductors for Optoelectronics PDF Download
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21
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Book Description
The overall goal of this Phase I project was to focus on developing procedures for the fabrication and evaluation of epitaxial layers of GaAs which are doped with rare earth (RE) ions of Erbium. The essential elements of the originally proposed approach have been demonstrated through the efforts on this Phase I project. Erbium was successfully incorporated in epitaxially grown Gallium Arsenide (GaAs) and Aluminum-Gallium Arsenide (AlGaAs) by using the Metal Organic Chemical Vapor Deposition (MOCVD) method and using Tris(n- butylcyclopentadienyl)erbium [Er(C4H9C5H4)3] as Er source material. Concentrations of Erbium as high as 10 to the 19 power /cu cm 3 were detected by Secondary Ion Mass Spectroscopy (SIMS). A substantial, though unknown, amount of the Erbium was incorporated in the form of trivalent ions; this was evident by the observation of the characteristic Er(3+) light emission from photoluminescence spectra of our samples.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21
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Book Description
The overall goal of this Phase I project was to focus on developing procedures for the fabrication and evaluation of epitaxial layers of GaAs which are doped with rare earth (RE) ions of Erbium. The essential elements of the originally proposed approach have been demonstrated through the efforts on this Phase I project. Erbium was successfully incorporated in epitaxially grown Gallium Arsenide (GaAs) and Aluminum-Gallium Arsenide (AlGaAs) by using the Metal Organic Chemical Vapor Deposition (MOCVD) method and using Tris(n- butylcyclopentadienyl)erbium [Er(C4H9C5H4)3] as Er source material. Concentrations of Erbium as high as 10 to the 19 power /cu cm 3 were detected by Secondary Ion Mass Spectroscopy (SIMS). A substantial, though unknown, amount of the Erbium was incorporated in the form of trivalent ions; this was evident by the observation of the characteristic Er(3+) light emission from photoluminescence spectra of our samples.
Author: Kevin Peter O'Donnell
Publisher: Springer Science & Business Media
ISBN: 9048128773
Category : Science
Languages : en
Pages : 366
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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Kevin Peter O'Donnell
Publisher: Springer
ISBN: 9789048128761
Category : Technology & Engineering
Languages : en
Pages : 355
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Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: S. Coffa
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 392
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Book Description
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382639
Category : Science
Languages : en
Pages : 624
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Book Description
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Author: Sanjay Sethi
Publisher:
ISBN:
Category :
Languages : en
Pages : 368
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Book Description
Author: Volkmar Dierolf
Publisher: Woodhead Publishing
ISBN: 008100060X
Category : Science
Languages : en
Pages : 472
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Book Description
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: E. F. Schubert
Publisher: Cambridge University Press
ISBN: 9780521419192
Category : Science
Languages : en
Pages : 632
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Book Description
Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.
Author: V. Dierolf
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 318
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Book Description
This book brings together more than 100 specialists from around the world to examine the status and emerging trends in the field of rare-earth-doped materials. These materials are used and/or are potential candidates for applications as lasers, light-emitting diodes, phosphors, displays and other photonic applications. Progress in growth, doping methods, characterization and device applications are reviewed. Topics include: rare-earth doping in nitrides; rare-earth doping in silicon-related materials; mechanisms and laser materials and phosphors and scintillators.
