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Author: F. Roozeboom
Publisher: Springer Science & Business Media
ISBN: 9401587116
Category : Science
Languages : en
Pages : 568
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Book Description
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Author: F. Roozeboom
Publisher: Springer Science & Business Media
ISBN: 9401587116
Category : Science
Languages : en
Pages : 568
Get Book Here
Book Description
Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the physics and engineering of this technology are discussed at the graduate level. Three interrelated areas are covered. First, the thermophysics of photon-induced annealing of semiconductor and related materials, including fundamental pyrometry and emissivity issues, the modelling of reactor designs and processes, and their relation to temperature uniformity. Second, process integration, treating the advances in basic equipment design, scale-up, integrated cluster-tool equipment, including wafer cleaning and integrated processing. Third, the deposition and processing of thin epitaxial, dielectric and metal films, covering selective deposition and epitaxy, integrated processing of layer stacks, and new areas of potential application, such as the processing of III-V semiconductor structures and thin- film head processing for high-density magnetic data storage.
Author: Fred Roozeboom
Publisher: The Electrochemical Society
ISBN: 9781566772327
Category : Technology & Engineering
Languages : en
Pages : 470
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Book Description
Author: Dim-Lee Kwong
Publisher: The Electrochemical Society
ISBN: 9781566773157
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
"Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 160
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Book Description
Author: National Semiconductor Metrology Program (U.S.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 148
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Book Description
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351834797
Category : Technology & Engineering
Languages : en
Pages : 373
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Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
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Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 160
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Book Description
Author: William S. Levine
Publisher: CRC Press
ISBN: 1351838393
Category : Technology & Engineering
Languages : en
Pages : 356
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Book Description
Control technology permeates every aspect of our lives. We rely on them to perform a wide variety of tasks without giving much thought to the origins of the technology or how it became such an important part of our lives. Control System Applications covers the uses of control systems, both in the common and in the uncommon areas of our lives. From the everyday to the unusual, it's all here. From process control to human-in-the-loop control, this book provides illustrations and examples of how these systems are applied. Each chapter contains an introduction to the application, a section defining terms and references, and a section on further readings that help you understand and use the techniques in your work environment. Highly readable and comprehensive, Control System Applications explores the uses of control systems. It illustrates the diversity of control systems and provides examples of how the theory can be applied to specific practical problems. It contains information about aspec ts of control that are not fully captured by the theory, such as techniques for protecting against controller failure and the role of cost and complexity in specifying controller designs.
