Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices PDF Download
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Author: Dan M. Fleetwood
Publisher: World Scientific
ISBN: 9789812794703
Category : Technology & Engineering
Languages : en
Pages : 354
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Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
Author: Dan M. Fleetwood
Publisher: World Scientific
ISBN: 9789812794703
Category : Technology & Engineering
Languages : en
Pages : 354
Get Book Here
Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
Author: Ronald D Schrimpf
Publisher: World Scientific
ISBN: 9814482153
Category : Technology & Engineering
Languages : en
Pages : 349
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Book Description
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Author: Jean-Luc Autran
Publisher: CRC Press
ISBN: 9780367655990
Category :
Languages : en
Pages : 439
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Book Description
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment--one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.
Author: Paul Leroux
Publisher: MDPI
ISBN: 3039212796
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.
Author: Jean-Luc Autran
Publisher: CRC Press
ISBN: 146659084X
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Soft errors are a multifaceted issue at the crossroads of applied physics and engineering sciences. Soft errors are by nature multiscale and multiphysics problems that combine not only nuclear and semiconductor physics, material sciences, circuit design, and chip architecture and operation, but also cosmic-ray physics, natural radioactivity issues, particle detection, and related instrumentation. Soft Errors: From Particles to Circuits addresses the problem of soft errors in digital integrated circuits subjected to the terrestrial natural radiation environment—one of the most important primary limits for modern digital electronic reliability. Covering the fundamentals of soft errors as well as engineering considerations and technological aspects, this robust text: Discusses the basics of the natural radiation environment, particle interactions with matter, and soft-error mechanisms Details instrumentation developments in the fields of environment characterization, particle detection, and real-time and accelerated tests Describes the latest computational developments, modeling, and simulation strategies for the soft error-rate estimation in digital circuits Explores trends for future technological nodes and emerging devices Soft Errors: From Particles to Circuits presents the state of the art of this complex subject, providing comprehensive knowledge of the complete chain of the physics of soft errors. The book makes an ideal text for introductory graduate-level courses, offers academic researchers a specialized overview, and serves as a practical guide for semiconductor industry engineers or application engineers.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 1439826951
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author: ASM International
Publisher: ASM International
ISBN: 1627081518
Category : Technology & Engineering
Languages : en
Pages : 666
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Book Description
The theme for the November 2017 conference was Striving for 100% Success Rate. Papers focus on the tools and techniques needed for maximizing the success rate in every aspect of the electronic device failure analysis process.
Author: John Peter Burke
Publisher: World Scientific
ISBN: 981447634X
Category : Science
Languages : en
Pages : 135
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Book Description
The field of nanotubes and nanowires is evolving at a rapid pace, with many potential applications in electronics, optics, and sensors, to name a few. In this book, various prominent researchers summarize our current understanding of these new materials systems, as well as some of these potential applications. A snapshot of the state-of-the-art in the field of nanowires and nanotubes, the contributions give an instructive mix of experimental, theoretical, and visionary material to give the reader an indication of where the field is now, and where it is going.With several points of view represented, including academic theoreticians, academic experimental device engineers, and industry researchers from well-known semiconductor companies, Nanotubes and Nanowires is an essential source of reference for physicists, chemists, materials scientists, and graduate students interested in keeping abreast of the latest developments in nanotechnology.
Author: Krzysztof Iniewski
Publisher: CRC Press
ISBN: 143984836X
Category : Technology & Engineering
Languages : en
Pages : 600
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Book Description
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies. Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics. The book is divided into three parts that address: Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices) Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells) Compound semiconductor devices and technology This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Author: Michael Levinshtein
Publisher: World Scientific
ISBN: 9812563954
Category : Technology & Engineering
Languages : en
Pages : 223
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Book Description
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
