Author: Thomas B. Mader
Publisher:
ISBN:
Category : Millimeter wave devices
Languages : en
Pages : 242

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Author: Iok Fai Chio
Publisher:
ISBN:
Category : Optical amplifiers
Languages : en
Pages : 252

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Author: Mladen Božanić
Publisher: Springer
ISBN: 3319283766
Category : Technology & Engineering
Languages : en
Pages : 347

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This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

Author: Robert A. York
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 560

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Book Description
A detailed and timely overview of recent developments in active quasi-optical arrays In recent years, active quasi-optics has emerged as one of the most dynamic fields of contemporary research—a highly unconventional approach to microwave and millimeter-wave power generation that integrates solid-state devices into a single quasi-optical component in which all devices operate in unison. This book defines and describes active quasi-optical arrays, reviews the current state of the art, and answers numerous basic and technical questions on the design, analysis, and application of these devices. The contributors to this volume are leading researchers in the field who present results and views from government, industrial, and university laboratories and offer a balanced discussion on a high technical level. They also offer insight into the applicability and commercial value of this technology for military systems, manufacturing processes, communications, and consumer products. Topics presented include: Analysis and design methodologies for quasi-optical active arrays Power-added and power-combining efficiencies of quasi-optical amplifier arrays Phase-shifterless beam steering in oscillator and amplifier arrays Integrating quasi-optical active components into a compact subsystem Design and fabrication of quasi-optical oscillators, amplifiers, multipliers, and tuners Characterization and measurement of quasi-optical components

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 9

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In active quasi-optics, we demonstrated the first successful monolithic HBT and pHEMT millimeter-wave grid amplifiers. In addition, we demonstrated a diode doubler grid with a record output of 24 mW at 1 THz. We also developed a series of Class-E amplifiers for communications and radar that are based on power MOSFET's with output powers in the frequency range from 7 to 14 MHz of 300 to 500 W, and efficiencies of 90%. We recently extended this work to demonstrate VHF and UHF Class-E amplifiers.

Author: Tatsuo Itoh
Publisher: John Wiley & Sons
ISBN: 0471463922
Category : Technology & Engineering
Languages : en
Pages : 482

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Book Description
A survey of microwave technology tailored for professionals in wireless communications RF Technologies for Low Power Wireless Communications updates recent developments in wireless communications from a hardware design standpoint and offers specialized coverage of microwave technology with a focus on the low power wireless units required in modern wireless systems. It explores results of recent research that focused on a holistic, integrated approach to the topics of materials, devices, circuits, modulation, and architectures rather than the more traditional approach of research into isolated topical areas. Twelve chapters deal with various fundamental research aspects of low power wireless electronics written by world-class experts in each field. The first chapter offers an overview of wireless architecture and performance, followed by detailed coverage of: Advanced GaAs-based HBT designs InP-based devices and circuits Si/SiGe HBT technology Noise in GaN devices Power amplifier architectures and nonlinearities Planar-oriented components MEMS and micromachined components Resonators, filters, and low-noise oscillators Antennas Transceiver front-end architectures With a clear focus and expert contributors, RF Technologies for Low Power Wireless Communications will be of interest to a wide range of electrical engineering disciplines working in wireless technologies.

Author: Tirdad Sowlati Hashjani
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
In this thesis, the use of Class E power amplifiers for digital wireless communication applications is presented for the first time. A linear transmitter design using Class E amplifier is proposed for the North American Digital Cellular Standard. In this architecture, a phase correcting feedback loop is used to cancel the AM-PM distortion in Class E power amplifier. Several low voltage Class E power amplifiers, and the phase correcting feedback loop are designed and implemented in a commercially available 0.8 $\mu$m GaAs MESFET process. A fully integrated Class E power module operating at 835 MHz is presented. The power module consists of a Class F driver stage and a Class E power amplifier, and delivers 250 mW to the standard 50 $\Omega$ load with a power added efficiency of 51%. The design and implementation of a hybrid Class E power module operating at 835 MHz is also discussed. In this design, the output matching network is implemented on an alumina substrate, and has a lower power dissipation than its GaAs counterpart. The power module delivers 443 mW to the 50 $\Omega$ load with a power added efficiency of 67%. A 1.8 GHz fully integrated Class E power module is also presented. In this case, the power module delivers 200 mW of power to the 50 $\Omega$ load with a power added efficiency of 57%. The design and implementation of the phase correcting feedback loop, which consists of a limiting amplifier, a phase detector and two phase shifters, are discussed. The phase correcting feedback loop is used to linearize the 835 MHz Class E hybrid power module. With a loop gain of 20, the maximum phase distortion in the power module was reduced from 30$\sp\circ$ to 4$\sp\circ$ and the total power added efficiency was 65%.

Author: Rizwan Bashirullah
Publisher:
ISBN:
Category : Electric power distribution
Languages : en
Pages : 100

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Author: Jason Doyama
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
The thesis deals with the design of a Class E power amplifier in CMOS technology. Presently in wireless communication systems, the power amplifier is implemented in GaAs or bipolar technologies, while the signal processing blocks are done in CMOS. If the power amplifier could be implemented in CMOS, it would allow the system to be fabricated on a single chip, thus reducing power, area and cost. The objective of this thesis is to investigate the design of such an amplifier in a deep submicron CMOS process. A Class E amplifier configuration was selected for implementation due to its expected high efficiency. The Class E power amplifier was implemented in a 0.35 [mu]m standard CMOS technology. The modeling of the CMOS compatible inductors used in the amplifier was carefully considered. A modified scalable inductor model was developed based upon process parameters and the spiral characteristic. The integrated amplifier itself consisted of a Class F driver and a Class E power stage. The amplifier was successfully implemented, occupying a silicon area of 1.92 mm2. The amplifier operates at 835MHz, delivering 79mW of power to a 50[Omega] load from a 3.3V supply with a power added efficiency of 36%.

Author: Katibe İlhan
Publisher:
ISBN:
Category :
Languages : tr
Pages :

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