Author: Federico Capasso
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
Book Description
Quantum Well and Superlattice Physics II
Author: Federico Capasso
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
Book Description
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 256
Book Description
Quantum Well and Superlattice Physics
Author:
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 246
Book Description
Publisher:
ISBN:
Category : Quantum wells
Languages : en
Pages : 246
Book Description
Physics and Applications of Quantum Wells and Superlattices
Author: E.E. Mendez
Publisher: Springer Science & Business Media
ISBN: 1468454781
Category : Science
Languages : en
Pages : 456
Book Description
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Publisher: Springer Science & Business Media
ISBN: 1468454781
Category : Science
Languages : en
Pages : 456
Book Description
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Quantum-well and Superlattice Physics III
Author: Gottfried H. Döhler
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 388
Book Description
Publisher:
ISBN:
Category : Mathematics
Languages : en
Pages : 388
Book Description
High Pressure in Semiconductor Physics II
Author:
Publisher: Academic Press
ISBN: 0080864538
Category : Science
Languages : en
Pages : 477
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial pistoncylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.
Publisher: Academic Press
ISBN: 0080864538
Category : Science
Languages : en
Pages : 477
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Volumes 54 and 55 present contributions by leading researchers in the field of high pressure semiconductors. Edited by T. Suski and W. Paul, these volumes continue the tradition of well-known but outdated publications such as Brigman's The Physics of High Pressure (1931 and 1949) and High Pressure Physics and Chemistry edited by Bradley. Volumes 54 and 55 reflect the industrially important recent developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures. These developments include the advent of the diamond anvil cell technique and the availability of commercial pistoncylinder apparatus operating at high hydrostatic pressures. These much-needed books will be useful to both researchers and practitioners in applied physics, materials science, and engineering.
Low Temperature Electronics
Author: Edmundo A. Gutierrez-D.
Publisher: Academic Press
ISBN: 0123106753
Category : Cryoelectronics
Languages : en
Pages : 985
Book Description
Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Publisher: Academic Press
ISBN: 0123106753
Category : Cryoelectronics
Languages : en
Pages : 985
Book Description
Summarizes the advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. This book provides an exploration of the theory, research, and technologies related to cryoelectronics.
Quantum Wells, Wires and Dots
Author: Paul Harrison
Publisher: John Wiley & Sons
ISBN: 111996475X
Category : Science
Languages : en
Pages : 564
Book Description
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their own.
Publisher: John Wiley & Sons
ISBN: 111996475X
Category : Science
Languages : en
Pages : 564
Book Description
Quantum Wells, Wires and Dots, 3rd Edition is aimed at providing all the essential information, both theoretical and computational, in order that the reader can, starting from essentially nothing, understand how the electronic, optical and transport properties of semiconductor heterostructures are calculated. Completely revised and updated, this text is designed to lead the reader through a series of simple theoretical and computational implementations, and slowly build from solid foundations, to a level where the reader can begin to initiate theoretical investigations or explanations of their own.
Superlattice to Nanoelectronics
Author: Raphael Tsu
Publisher: Elsevier
ISBN: 0080968147
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Publisher: Elsevier
ISBN: 0080968147
Category : Technology & Engineering
Languages : en
Pages : 346
Book Description
Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials
Semiconductor Superlattices
Author: M. A. Herman
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3112761855
Category : Technology & Engineering
Languages : en
Pages : 272
Book Description
No detailed description available for "Semiconductor Superlattices".
Publisher: Walter de Gruyter GmbH & Co KG
ISBN: 3112761855
Category : Technology & Engineering
Languages : en
Pages : 272
Book Description
No detailed description available for "Semiconductor Superlattices".
Semiconductor Superlattices: Growth And Electronic Properties
Author: Fernando Agullo-rueda
Publisher: World Scientific
ISBN: 9814501255
Category : Science
Languages : en
Pages : 269
Book Description
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.
Publisher: World Scientific
ISBN: 9814501255
Category : Science
Languages : en
Pages : 269
Book Description
This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.