Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide
Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide
Author: Siu Sing Chan
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Publisher:
ISBN:
Category : Diffusion
Languages : en
Pages : 172
Book Description
As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide
Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
Book Description
Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
Book Description
Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Nuclear Science Abstracts
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1014
Book Description
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1014
Book Description
Advances in Electronics and Electron Physics
Author:
Publisher: Academic Press
ISBN: 0080577261
Category : Computers
Languages : en
Pages : 407
Book Description
Advances in Electronics and Electron Physics
Publisher: Academic Press
ISBN: 0080577261
Category : Computers
Languages : en
Pages : 407
Book Description
Advances in Electronics and Electron Physics
Ion Implantation
Author: Fred H. Eisen
Publisher: Gordon & Breach Publishing Group
ISBN:
Category : Science
Languages : en
Pages : 488
Book Description
Publisher: Gordon & Breach Publishing Group
ISBN:
Category : Science
Languages : en
Pages : 488
Book Description
Semiconducting Devices
Author: A. H. Agajanian
Publisher: Ifi/Plenum
ISBN:
Category : Reference
Languages : en
Pages : 980
Book Description
Publisher: Ifi/Plenum
ISBN:
Category : Reference
Languages : en
Pages : 980
Book Description
Ion-solid Interactions
Author: Walter M. Gibson
Publisher:
ISBN:
Category : Language Arts & Disciplines
Languages : en
Pages : 726
Book Description
Publisher:
ISBN:
Category : Language Arts & Disciplines
Languages : en
Pages : 726
Book Description
Ion-solid Interactions: Bibliography
Author: Walter M. Gibson
Publisher:
ISBN:
Category : Collisions (Physics)
Languages : en
Pages : 632
Book Description
Publisher:
ISBN:
Category : Collisions (Physics)
Languages : en
Pages : 632
Book Description
Properties of Gallium Arsenide
Author:
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description
Publisher: INSPEC
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 370
Book Description