Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces

Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces PDF Author: Peter Mark
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 478

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Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces

Proceedings of the Sixth Annual Conference on the Physics of Compound Semiconductor Interfaces PDF Author: Peter Mark
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 478

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Proceedings of the 20th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces

Proceedings of the 20th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces PDF Author: T. C. McGill
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 450

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Proceedings of the 3rd Annual Conference on the Physics of Compound Superconductor Interfaces

Proceedings of the 3rd Annual Conference on the Physics of Compound Superconductor Interfaces PDF Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 232

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Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes)

Physics Of Semiconductors, The - Proceedings Of The Xxi International Conference (In 2 Volumes) PDF Author: Ping Jiang
Publisher: World Scientific
ISBN: 9814554065
Category :
Languages : en
Pages : 2151

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Book Description
The 21st conference proceedings continue the tradition of the ICPS series. The proceedings cover all aspects of semiconductor physics, including those related to materials, processing and devices. Plenary and invited speakers address areas of major interest.

Surface and Interface Effects in VLSI

Surface and Interface Effects in VLSI PDF Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396

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Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces PDF Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472

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Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Proceedings of the 17th International Conference on the Physics of Semiconductors

Proceedings of the 17th International Conference on the Physics of Semiconductors PDF Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580

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Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.

Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces

Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces PDF Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 176

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Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference PDF Author: J Pollman
Publisher: World Scientific
ISBN: 9814552399
Category :
Languages : en
Pages : 818

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Book Description
Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996

Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 PDF Author: M.S. Shur
Publisher: CRC Press
ISBN: 1000157121
Category : Science
Languages : en
Pages : 1096

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Book Description
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.