Proceedings of the NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices Held in San Miniato, Italy on July 10-23, 1983. The Physics of Submicron Semiconductor Devices. (NATO ASI Series B: Physics, Volume 180). PDF Download

Author: Harold L. Grubin
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ISBN:
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Languages : en
Pages : 741

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Book Description
Contents: Modelling of Sub-Micron Devices; Boltzmann Transport Equation; Transport and Material Considerations for Submicron Devices; Epitaxial Growth for Sub Micron Structures; Insulator/Semiconductor Interfaces; Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces; Deep Levels at Compound-Semiconductor Interfaces; Ensemble Monte Carlo Techniques; Noise and Diffusion in Submicron Structures; Superlattices; Submicron Lithography; Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension; Physics of Heterostructures and Heterostructure Devices; Correlation Effects in Short Time, Nonstationary Transport; Device-Device Interactions; Quantum Transport and the Wigner Function; Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices; The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices; Monte Carlo Simulation of Transport in Submicron Structures; Two Dimensional Electron Gas Fet; Hot Electron Transfer AMplifiers; New Graded Band Gap and Superlattice Structures and Their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices; Metal-Semiconductor Interfaces; Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser-Excited Electron-Hole Plasmas; and Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques. (JHD).