Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 480
Book Description
Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors (6th) Held in Oxford (England) 5-8 April 1989: Structure and Properties of Dislocations in Semiconductors 1989
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 480
Book Description
Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Publisher:
ISBN:
Category :
Languages : en
Pages : 480
Book Description
Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Structure and Properties of Dislocations in Semiconductors 1989, Proceedings of the 6th INT Symposium, Oxford, April 1989
Author: S. G. Roberts
Publisher: CRC Press
ISBN: 9780854980604
Category : Dislocation in metals
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Publisher: CRC Press
ISBN: 9780854980604
Category : Dislocation in metals
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Structure and Properties of Dislocations in Semiconductors 1989, Proceedings of the 6th INT Symposium, Oxford, April 1989
Author: S. G. Roberts
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Government reports annual index
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 1308
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 1308
Book Description
Government Reports Announcements & Index
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1652
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1652
Book Description
International Symposium on the Structure and Properties of Dislocations in Semiconductors ; 5
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
International Symposium on the Structure and Properties of Dislocations in Semiconductors ; 4
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Dislocations in Solids
Author: Hiroshi Suzuki
Publisher: CRC Press
ISBN: 1466561343
Category : Technology & Engineering
Languages : en
Pages : 691
Book Description
This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.
Publisher: CRC Press
ISBN: 1466561343
Category : Technology & Engineering
Languages : en
Pages : 691
Book Description
This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.
Subject Guide to Books in Print
Author:
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 2486
Book Description
Publisher:
ISBN:
Category : American literature
Languages : en
Pages : 2486
Book Description
ESN Information Bulletin
Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 706
Book Description
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 706
Book Description