Proceedings of the IEEE ... International Symposium on Compound Semiconductors PDF Download
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Author:
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 264
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Book Description
Author:
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 264
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Book Description
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566774628
Category : Technology & Engineering
Languages : en
Pages : 500
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Book Description
Author: H Sakaki
Publisher: CRC Press
ISBN: 1000112330
Category : Science
Languages : en
Pages : 919
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Book Description
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 696
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Book Description
Author: D. N. Buckley
Publisher: The Electrochemical Society
ISBN: 9781566770750
Category : Technology & Engineering
Languages : en
Pages : 338
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Book Description
Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815224
Category : Science
Languages : en
Pages : 606
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Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 636
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Book Description
Author: Athanasios Dimoulas
Publisher: Springer Science & Business Media
ISBN: 354071491X
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author: M. E. Overberg
Publisher: The Electrochemical Society
ISBN: 1607682605
Category :
Languages : en
Pages : 294
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Book Description
Author: F. Ren
Publisher: The Electrochemical Society
ISBN: 1566775051
Category : Compound semiconductors
Languages : en
Pages : 491
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Book Description
This volume contains papers from two symposia: State of the Art Program on Compound Semiconductors 45 and Wide Bandgap Semiconductor Materials and Devices VII.
