Proceedings of the 4th Annual Conference on the Physics of Compound Semiconductor Interfaces PDF Download
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Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 176
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 176
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Book Description
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Heterostructures
Languages : en
Pages : 396
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Book Description
Author: Peter Mark
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 478
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Book Description
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217760
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author: T. C. McGill
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 450
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Book Description
Author: M.S. Shur
Publisher: CRC Press
ISBN: 1000157121
Category : Science
Languages : en
Pages : 1096
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Book Description
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 764
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Book Description
Author: Robert S. Bauer
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 408
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Book Description
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566773539
Category : Technology & Engineering
Languages : en
Pages : 180
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Book Description
Author: Carl Wilmsen
Publisher: Springer Science & Business Media
ISBN: 1468448358
Category : Science
Languages : en
Pages : 472
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Book Description
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
