Author: B. Jayant Baliga
Publisher: Springer
ISBN: 3319939882
Category : Technology & Engineering
Languages : en
Pages : 1114
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Book Description
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Author: Stefan Linder
Publisher: EPFL Press
ISBN: 9780824725693
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
The aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.
Author: Stefan Linder
Publisher: CRC Press
ISBN: 1482293005
Category : Science
Languages : en
Pages : 278
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Book Description
Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are expl
Author: M. Kubat
Publisher: Springer Science & Business Media
ISBN: 3662024187
Category : Technology & Engineering
Languages : en
Pages : 532
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Book Description
The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.
Author: Ulrich Nicolai
Publisher:
ISBN: 9783938843666
Category :
Languages : en
Pages : 454
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Book Description
Author: Josef Lutz
Publisher:
ISBN: 9783319709185
Category : Electronic book
Languages : en
Pages :
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Book Description
This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Author: Madhavan Swaminathan
Publisher: Pearson Education
ISBN: 0132797178
Category : Technology & Engineering
Languages : en
Pages : 599
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Book Description
The First Comprehensive, Example-Rich Guide to Power Integrity Modeling Professionals such as signal integrity engineers, package designers, and system architects need to thoroughly understand signal and power integrity issues in order to successfully design packages and boards for high speed systems. Now, for the first time, there's a complete guide to power integrity modeling: everything you need to know, from the basics through the state of the art. Using realistic case studies and downloadable software examples, two leading experts demonstrate today's best techniques for designing and modeling interconnects to efficiently distribute power and minimize noise. The authors carefully introduce the core concepts of power distribution design, systematically present and compare leading techniques for modeling noise, and link these techniques to specific applications. Their many examples range from the simplest (using analytical equations to compute power supply noise) through complex system-level applications. The authors Introduce power delivery network components, analysis, high-frequency measurement, and modeling requirements Thoroughly explain modeling of power/ground planes, including plane behavior, lumped modeling, distributed circuit-based approaches, and much more Offer in-depth coverage of simultaneous switching noise, including modeling for return currents using time- and frequency-domain analysis Introduce several leading time-domain simulation methods, such as macromodeling, and discuss their advantages and disadvantages Present the application of the modeling methods on several advanced case studies that include high-speed servers, high-speed differential signaling, chip package analysis, materials characterization, embedded decoupling capacitors, and electromagnetic bandgap structures This book's system-level focus and practical examples will make it indispensable for every student and professional concerned with power integrity, including electrical engineers, system designers, signal integrity engineers, and materials scientists. It will also be valuable to developers building software that helps to analyze high-speed systems.
Author: Katsuaki Suganuma
Publisher: Woodhead Publishing
ISBN: 0081020953
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. - Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance - Provides the latest research on potential solutions, with an eye towards the end goal of system integration - Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates
Author: Satoshi Koizumi
Publisher: Woodhead Publishing
ISBN: 0081021844
Category : Technology & Engineering
Languages : en
Pages : 468
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Book Description
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Author: B. Jayant Baliga
Publisher: Brooks/Cole
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
