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Author:
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ISBN:
Category : Metallurgy
Languages : en
Pages : 1156
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Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 1156
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Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1208
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Author:
Publisher:
ISBN:
Category : Metallurgy
Languages : en
Pages : 970
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Author: P. Hautojärvi
Publisher: Springer Science & Business Media
ISBN: 364281316X
Category : Science
Languages : en
Pages : 266
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Book Description
In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.
Author:
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ISBN:
Category : Science
Languages : en
Pages : 724
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Author: Reinhard Krause-Rehberg
Publisher: Springer Science & Business Media
ISBN: 9783540643715
Category : Science
Languages : en
Pages : 408
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Book Description
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author: Y. C. Jean
Publisher: World Scientific
ISBN: 9812775617
Category : Science
Languages : en
Pages : 426
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Book Description
This book provides a comprehensive description of the principles and applications of positron and positronium chemistry. Pedagogical and tutorial in nature, it will be ideal for graduate students and researchers in the area of positron annihilation spectroscopy. The contributing authors are authoritative scientists prominent in the frontiers of research, actively pursuing positron annihilation research on chemical and applied systems. Contents: Introduction to Positron and Positronium Chemistry (Y C Jean et al.); Compounds of Positrons and Positronium (D M Schrader); Experimental Techniques in Positron Spectroscopy (P G Coleman); Organic and Inorganic Chemistry of the Positron and Positronium (G Duplotre & I Billard); Physical and Radiation Chemistry of the Positron and Positronium (S V Stepanov & V M Byakov); Positrons and Positronium in the Gas Phase (D M Schrader); Positron Porosimetry (M H Weber & K G Lynn); Positron Annihilation Studies on Superconducting Materials (C S Sundar); Positronium in Si and SiO 2 Thin Films (R Suzuki); Applications to Polymers (P E Mallon); Applications of Slow Positrons to Polymeric Surfaces and Coatings (Y C Jean et al.); Positron Annihilation Induced Auger Spectroscopy (S Amdani et al.); Characterization of Nanoparticle and Nanopore Materials (J Xu); AMOC in Positron and Positronium Chemistry (H Stoll et al.). Readership: Materials science researchers; physical chemists; polymer scientists and engineers; chemical and mechanical engineers; solid state physicists; graduate students in chemistry, physics, engineering and polymer science; coating industry researchers."
Author: C.T. Whelan
Publisher: Springer Science & Business Media
ISBN: 9780306461811
Category : Science
Languages : en
Pages : 392
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Book Description
The last few years have seen some remarkable advances in the understanding of atomic phenomena. It is now possible to isolate atomic systems in traps, measure in coincidence the fragments of collision processes, routinely produce, and study multicharged ions. One can look at bulk matter in such a way that the fundamental atomic character is clearly evident and work has begun to tease out the properties of anti matter. The papers in this book reflect many aspects of modem Atomic Physics. They correspond to the invited talks at a conference dedicated to the study of "New Directions in Atomic Physics," which took place in Magdalene College, Cambridge in July of 1998. The meeting was designed as a way of taking stock of what has been achieved and, it was hoped, as a means of stimulating new research in new areas, along new lines. Consequently, an effort was made to touch on as many directions as we could in the four days of the meeting. We included some talks which overviewed whole subfields, as well as quite a large number of research contributions. There is a unity to Physics and we tried to avoid any artificial division between theory and experiment. We had roughly the same number of talks from those who are primarily concerned with making measurements, and from those who spend their lives trying to develop the theory to describe the experiments.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1266
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Book Description
