Piezoelectric, Dielectric and Ferroelectric Thin Films on Metal Substrates for Microelectronic Applications PDF Download
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Author: Sudarsan Srinivasan
Publisher:
ISBN:
Category :
Languages : en
Pages : 158
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Book Description
Keywords: microelectronics, oxygen, fatigue, PZT, copper, BZT, piezoelectric, actuators, dielectric, Ferroelectric.
Author: Sudarsan Srinivasan
Publisher:
ISBN:
Category :
Languages : en
Pages : 158
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Book Description
Keywords: microelectronics, oxygen, fatigue, PZT, copper, BZT, piezoelectric, actuators, dielectric, Ferroelectric.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The purpose of this research has been to demonstrate the possibility of integrating piezoelectric, dielectric and ferroelectric- lead and barium based oxide thin films and PVDF polymer on flexible metal substrates for microelectronic applications. Investigations on the key processing parameters and properties relationship for lead zirconate titanate (PZT, 52D 8) and barium zirconate titanate (BZT, 35D 5) based thin films on Cu foils were performed and studied. The impact of the oxygen partial pressure on the electrical properties of PZT and BZT thin films during processing has been explored, and demonstrated that high quality films and interfaces can be achieved through control of the pO2 within a window predicted by thermodynamic stability considerations. It should be noted that the high temperature processing of barium based ferroelectric oxides can be processed on Cu foils in a wider window of pO2 compared to that of processing lead based ferroelectric oxides. Also, the high volatile nature of lead makes the processing of lead based ferroelectric oxides difficult. Considering these issues, this work shows the processing technique undertaken to achieve high quality barium and lead based oxide thin films on Cu foils. The demonstration has broad implications, opening up the possibility of the use of low cost, high conductivity copper electrodes for a range of Pb-based and Ba-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors, and sensors; multilayer PZT piezoelectric stacks; and multilayer lead magnesium niobate-lead titanate-based dielectric and electrostrictive devices. In the case of ferroelectric PZT films on Cu foil, the capacitors do not fatigue upon repeated switching like those with Pt noble metal electrodes. Instead they appear to be fatigue-resistant like ferroelectric capacitors with oxide electrodes. This may have implications for ferroelectric nonvolatile memories. The eff.
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
ISBN: 9783540241638
Category : Computers
Languages : en
Pages : 272
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Bruce A. Tuttle
Publisher: John Wiley & Sons
ISBN: 1118407229
Category : Technology & Engineering
Languages : en
Pages : 86
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Book Description
Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.
Author: Masanori Okuyama
Publisher: Springer
ISBN: 9783540806295
Category : Science
Languages : en
Pages : 244
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Book Description
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Author: Klaus Wetzig
Publisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 388
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Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
Author: Emmanuel Defaÿ
Publisher: John Wiley & Sons
ISBN: 111861660X
Category : Technology & Engineering
Languages : en
Pages : 329
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Book Description
This book contains four parts. The first one is dedicated to concepts. It starts with the definitions and examples of what is piezo-pyro and ferroelectricity by considering the symmetry of the material. Thereafter, these properties are described within the framework of Thermodynamics. The second part described the way to integrate these materials in Microsystems. The third part is dedicated to characterization: composition, structure and a special focused on electrical behaviors. The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films.
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 0470065419
Category : Technology & Engineering
Languages : en
Pages : 508
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Book Description
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Author: Simon Fichtner
Publisher: BoD – Books on Demand
ISBN: 3750431426
Category : Science
Languages : en
Pages : 180
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Book Description
The usage of piezoelectric and ferroelectric thin films is a promising approach to significantly increase the functionality of microelectromechanical systems (MEMS) as well as of microelectronics in general. Since the device performance thus becomes directly connected to the properties of the functional film, new as well as improved piezoelectric and ferroelectric materials can allow substantial technological innovation. This dissertation focused on enhancing the piezoelectric properties of AlN by forming solid solutions with ScN and includes the first experimental observation of ferroelectricity in AlScN, and thus the first discovery of ferroelectricity in a III-V semiconductor based material in general. Compared to AlN, piezoelectric coefficients that are up to 450% higher were realized in AlScN, with d33f reaching a maximum of 17.2 pm/V and e31f reaching 3.2 C/m2. In this context, the identification and subsequent rectification of a major morphological instability in AlScN that becomes more pronounced with increasing Sc content was reported. Thus, films free of morphological inhomogeneities with close to ideal piezoelectric properties could be deposited up to 0.43% ScN. Control of the intrinsic film stress was demonstrated over a wide range from strongly tensile to strongly compressive for all the investigated Sc contents. The improved piezoelectric coefficients together with the possibility of stress control allowed the fabrication of suspended MEMS structures with electromechanical coupling coefficients improved by more than 320% relative to AlN. Ferroelectrictiy in AlScN was observed starting at ScN contents of 27%. Its emergence was connected to the same gradual evolution from the initial wurtzite structure to the layered hexagonal structure that also causes the enhanced piezoelectric coefficients while increasing the Sc content. Ferroelectric AlScN allowed the first experimental observation of the spontaneous polarization of the wurtzite structure and confirms that this polarization is more than one order of magnitude above most previous theoretical predictions. The large, tunable coercive fields and polarization constants together with the broad linear strain intervals, a paraelectric transition temperature above 600°C as well as the technological compatibility of the III-nitrides lead to a combination of exceptional properties that was previously inaccessible in ferroelectric thin films.
