Physics Based Virtual Source Compact Model of Gallium-nitride High Electron Mobility Transistors PDF Download
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Author: Hao Zhang
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 77
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Book Description
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) outperform Gallium Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to its large bandgap (~3.4 eV@300 K) and high carrier mobility property (1500 - 2300 cm^2/(V-s)). These advantages have made GaN technology a promising candidate for future high-power microwave and potential millimeter-wave applications. Current GaN HEMT models used by the industry, such as Angelov Model, EEHEMT Model and DynaFET (Dynamic FET) model, are empirical or semi-empirical. Lacking the physical description of the device operations, these empirical models are not directly scalable. Circuit design that uses the models requires multiple iterations between the device and circuit levels, becoming a lengthy and expensive process. Conversely existing physics based models, such as surface potential model, are computationally intensive and thus impractical for full scale circuit simulation and optimization. To enable efficient GaN-based RF circuit design, computationally efficient physics based compact models are required. In this thesis, a physics based Virtual Source (VS) compact model is developed for GaN HEMTs targeting RF applications. While the intrinsic current and charge model are developed based on the Virtual Source model originally proposed by MIT researchers, the gate current model and parasitic element network are proposed based on our applications with a new efficient parameter extraction flow. Both direct current (DC) of drain and gate currents and RF measurements are conducted for model parameter extractions. The new flow first extracts device parasitic resistive values based on the DC measurement of gate current. Then parameters related with the intrinsic region are determined based on the transport characteristics in the subthreshold and above threshold regimes. Finally, the parasitic resistance, capacitance and inductance values are optimized based on the S-parameter measurement. This new extraction flow provides reliable and accurate extraction for parasitic element values while achieving reasonable resolutions holistically with both DC and RF characteristics. The model is validated against measurement data in terms of drain current, gate current and scattering parameter (S-parameter). This model provides simple yet clear physical description for GaN HEMTs with only a short list of model parameters compared with other empirical or physics based models. It can be easily integrated in circuit simulators for RF circuit design.
Author: Hao Zhang
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 77
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Book Description
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) outperform Gallium Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to its large bandgap (~3.4 eV@300 K) and high carrier mobility property (1500 - 2300 cm^2/(V-s)). These advantages have made GaN technology a promising candidate for future high-power microwave and potential millimeter-wave applications. Current GaN HEMT models used by the industry, such as Angelov Model, EEHEMT Model and DynaFET (Dynamic FET) model, are empirical or semi-empirical. Lacking the physical description of the device operations, these empirical models are not directly scalable. Circuit design that uses the models requires multiple iterations between the device and circuit levels, becoming a lengthy and expensive process. Conversely existing physics based models, such as surface potential model, are computationally intensive and thus impractical for full scale circuit simulation and optimization. To enable efficient GaN-based RF circuit design, computationally efficient physics based compact models are required. In this thesis, a physics based Virtual Source (VS) compact model is developed for GaN HEMTs targeting RF applications. While the intrinsic current and charge model are developed based on the Virtual Source model originally proposed by MIT researchers, the gate current model and parasitic element network are proposed based on our applications with a new efficient parameter extraction flow. Both direct current (DC) of drain and gate currents and RF measurements are conducted for model parameter extractions. The new flow first extracts device parasitic resistive values based on the DC measurement of gate current. Then parameters related with the intrinsic region are determined based on the transport characteristics in the subthreshold and above threshold regimes. Finally, the parasitic resistance, capacitance and inductance values are optimized based on the S-parameter measurement. This new extraction flow provides reliable and accurate extraction for parasitic element values while achieving reasonable resolutions holistically with both DC and RF characteristics. The model is validated against measurement data in terms of drain current, gate current and scattering parameter (S-parameter). This model provides simple yet clear physical description for GaN HEMTs with only a short list of model parameters compared with other empirical or physics based models. It can be easily integrated in circuit simulators for RF circuit design.
Author: Ujwal Radhakrishna
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
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Book Description
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.
Author: Ujwal Radhakrishna
Publisher:
ISBN:
Category :
Languages : en
Pages : 291
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Book Description
Gallium-Nitride-based high electron mobility transistor (HEMTs) technology is increasingly finding space in high voltage (HV) and high frequency (HF) circuit application domains. The superior breakdown electric field, high electron mobility, and high temperature performance of GaN HEMTs are the key factors for its use as HV switches in converters and active components of RF-power amplifiers. Designing circuits in both application regimes requires accurate compact device models that are grounded in physics and can describe the non-linear terminal characteristics. Currently available compact models for HEMTs are empirical and hence are lacking in physical description of the device, which becomes a handicap in understanding key device-circuit interactions and in accurate estimation of device behavior in circuits. This thesis seeks to develop a physics-based compact model for GaN HEMTs from first principles which can be used as a design tool for technology optimization to identify device-performance bottlenecks on one hand and as a tool for circuit design to investigate the impact of behavioral nuances of the device on circuit performance, on the other. Part of this thesis consists of demonstrations of the capabilities of the model to accurately predict device characteristics such as terminal DC- and pulsed-currents, charges, small-signal S-parameters, large-signal switching characteristics, load-pull, source-pull and power-sweep, inter-modulation-distortion and noise-figure of both HV- and RF-devices. The thesis also aims to tie device-physics concepts of carrier transport and charge distribution in GaN HEMTs to circuit-design through circuit-level evaluation. In the HV-application regime benchmarking is conducted against switching characteristics of a GaN DC-DC converter to understand the impact of device capacitances, field plates, temperature and charge-trapping on switching slew rates. In the RF-application regime validation is done against the large-signal characteristics of GaN-power amplifiers to study the output-power, efficiency and compression characteristics as function of class-of-operation. Noise-figure of low-noise amplifiers is tested to estimate the contributions of device-level noise sources, and validation against switching frequency and phase-noise characteristics of voltage-controlled oscillators is done to evaluate the noise performance of GaN HEMT technology. Evaluation of model-accuracy in determining the conversion-efficiency of RF-converters and linearity metrics of saturated non-linear amplifiers is carried out. The key contribution of this work is to provide a tool in the form of a physics-based compact model to device-technology-engineers and circuit-designers, who can use it to evaluate the potential strengths and weaknesses of the emerging GaN technology.
Author: D. Nirmal
Publisher: Springer
ISBN: 9789819775057
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1118844785
Category : Science
Languages : en
Pages : 266
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Book Description
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Author: Sourabh Khandelwal
Publisher:
ISBN: 9783030777319
Category :
Languages : en
Pages : 0
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Book Description
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
Author: Michael Hosch
Publisher: Cuvillier Verlag
ISBN: 3736938446
Category : Technology & Engineering
Languages : en
Pages : 129
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Book Description
This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Birte-Julia Godejohann
Publisher:
ISBN: 9783839613405
Category : Technology & Engineering
Languages : en
Pages : 156
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Book Description
Author: Erdin Ture
Publisher: Fraunhofer Verlag
ISBN: 9783839613412
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The rapidly-growing data throughput rates in a wide range of wireless communication applications are pushing the established semiconductor device technologies to their limits. Considerably higher levels of solid-state output power will therefore be needed to meet the demand in the next generation satellite communications as well as the RADAR systems. Owing to their superior material properties such as high breakdown fields and peak electron velocities, GaN-based high electron mobility transistors (HEMTs) have recently prevailed in high-power systems operating in the microwave frequency bands. On the other hand at the millimetre-wave (MMW) and sub-MMW frequencies, highly-scaled GaN HEMTs are prone to experiencing deteriorated high frequency characteristics which severely limit the high-power performance. In an attempt to overcome this, 3-dimensional GaN HEMT devices featuring the Tri-gate topology are developed in this work, exhibiting enhanced performance in terms of both off- and on-state figures of merit. The demonstrated results promote the great potential of Tri-gate GaN HEMTs for both MMW power amplifier and high-speed logic applications.
