Phase Stability of Injection-locked Beam of Semiconductor Lasers PDF Download
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Author:
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Category : Semiconductor lasers
Languages : en
Pages : 16
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Author:
Publisher:
ISBN:
Category : Semiconductor lasers
Languages : en
Pages : 16
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Author: Jin Hyuk Kwon
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Category :
Languages : en
Pages :
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Author: Jack Feinberg
Publisher:
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Category :
Languages : en
Pages : 49
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This goal of this project is to produce a high-brightness, narrow-frequency light beam from a semiconductor laser array. We used a mutually-pumped phase conjugator to couple a single-frequency master laser into a high-power diode laser array. This injected light narrowed the frequency bandwidth of the laser array's output beam. Tuning the master laser (by adjusting its current or its temperature) then smoothly tuned the laser array, while the output beam remained diffraction limited. We compared the performance of the four types of mutually-pumped phase conjugators for injecting light into a laser array. We also invented a new technique for detecting domains hidden in photorefractive crystals. We also measured the phase of the light produced by frequency doubling in a self-phase matched optical fiber. We also measured the anisotropy of the mobility of holes in barium titanate crystals. We found that the drift mobility perpendicular to the crystal's c-axis is 40 times that along the c-axis. We also measured the calibrated small-signal gain spectrum, over a range of eight orders of magnitude, of a single-mode, flared semiconductor amplifier. We found that the detailed-balance theory of semiconductor lasers theory is not consistent with our data. We used a self-pumped phase conjugator to determine a key calibration constant in our experiments.
Author:
Publisher: GRIN Verlag
ISBN: 3346581845
Category : Science
Languages : en
Pages : 43
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Bachelor Thesis from the year 2021 in the subject Physics - Applied physics, grade: 1,0, University of Tubingen, language: English, abstract: The goal of this work is to find a stable injection lock setup with over 100 mW of output power. There are two diodes characterized for this aim while injection locking them. One is available at Thorlabs with a center wavelength of 660 nm and up to 120 mW of output power in the free-running state. The other diode manufactured by Ushio is not yet readily available on the market but has a center wavelength of 675 nm with up to 0,25 W of output power and can be directly operated at 671 nm by lowering the temperature. There are concerns that this temperature would be below the dew point, especially in summer. This causes condensation on the diode from the water vapor in the air, explaining why this diode is tested only via the second approach. In Section 2 a short introduction into semiconductor laser physics is explaining the working principle of laser diodes. Additionally, the injection locking theory and the Gaussian beam model are discussed. The experimental setup and instrument control are described in Section 3. This is followed by the characterization of the Thorlabs diode with a center wavelength of 660 nm in Section 4 and the Ushio diode with a center wavelength of 675 nm at appropriate temperatures in Section 5. An outlook on further improving the setup by actively stabilizing the injection lock is given in Section 6. In cold atom experiments for laser cooling and trapping of atoms, laser powers of more than 100 mW are often required. Furthermore, magneto-optical traps, while loading, are in need of sufficient power to reduce the number of atoms lost on the way. The output power of an external cavity diode laser does not produce enough output power for such applications. Alternatively, tapered amplifiers are a way to produce sufficient output power. These are currently not available for the targeted laser cooling wavelength for lithium of 671nm. However, injection locking of free-running, high power diodes is an alternative to tapered amplifiers for delivering enough output power. This is a technique to produce higher output power at a stable frequency. To achieve this, a weak signal of typically a few mW of an external cavity diode "seed" laser is injected into a free-running "slave" diode, which is capable of higher output power.
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Category :
Languages : en
Pages : 5
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This is an 'equipment only' grant under the Defense University Research Instrumentation Program. A report of the results obtained with this equipment is contained in the final report for Grant F49620-95-1-0082, 'Phase-Conjugate Injection Locking of Laser Diode Arrays.' To avoid duplication of paperwork, only a partial summary of that report will be duplicated here. This grant is to produce high-brightness, narrow-frequency light beams from semiconductor laser arrays using optical phase conjugation. The investigators recently demonstrated that their proposed techniques are both practical and efficient, and can be applied to commercially available semiconductor lasers. Their experiments coupled an optical phase conjugator to a broad-area semiconductor laser, causing the laser to emit a 0.5 watt, near-diffraction-limited output beam. Their system is simple and compact, and it also automatically adjusts for any frequency drift or gradual misalignment of the optical components. The investigators extended their techniques from single, broad-area lasers to powerful semiconductor laser arrays.
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Category : Aeronautics
Languages : en
Pages : 440
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Author:
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Category : Aeronautics
Languages : en
Pages : 16
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Author: Y. C. Chung
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ISBN:
Category : Technology & Engineering
Languages : en
Pages : 460
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Author:
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ISBN:
Category : Electrical engineering
Languages : en
Pages : 1360
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Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1118
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