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Author: Andrea Redaelli
Publisher: Springer
ISBN: 3319690531
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
Author: Andrea Redaelli
Publisher: Springer
ISBN: 3319690531
Category : Technology & Engineering
Languages : en
Pages : 342
Get Book Here
Book Description
This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.
Author: Simone Raoux
Publisher: Springer Science & Business Media
ISBN: 0387848746
Category : Technology & Engineering
Languages : en
Pages : 430
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Book Description
"Phase Change Materials: Science and Applications" provides a unique introduction of this rapidly developing field. Clearly written and well-structured, this volume describes the material science of these fascinating materials from a theoretical and experimental perspective. Readers will find an in-depth description of their existing and potential applications in optical and solid state storage devices as well as reconfigurable logic applications. Researchers, graduate students and scientists with an interest in this field will find "Phase Change Materials" to be a valuable reference.
Author:
Publisher: Academic Press
ISBN: 0128187549
Category : Computers
Languages : en
Pages : 146
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Book Description
Advances in Computers, Volume 118, the latest volume in this innovative series published since 1960, presents detailed coverage of new advancements in computer hardware, software, theory, design and applications. Chapters in this updated release include Introduction to non-volatile memory technologies, The emerging phase-change memory, Phase-change memory architectures, Inter-line level schemes for handling hard errors in PCMs, Handling hard errors in PCMs by using intra-line level schemes, and Addressing issues with MLC Phase-change Memory.
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Michel Frémond
Publisher: Springer Science & Business Media
ISBN: 3642246095
Category : Mathematics
Languages : en
Pages : 313
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Book Description
Predictive theories of phenomena involving phase change with applications in engineering are investigated in this volume, e.g. solid-liquid phase change, volume and surface damage, and phase change involving temperature discontinuities. Many other phase change phenomena such as solid-solid phase change in shape memory alloys and vapor-liquid phase change are also explored. Modeling is based on continuum thermo-mechanics. This involves a renewed principle of virtual power introducing the power of the microscopic motions responsible for phase change. This improvement yields a new equation of motion related to microscopic motions, beyond the classical equation of motion for macroscopic motions. The new theory sensibly improves the phase change modeling. For example, when warm rain falls on frozen soil, the dangerous black ice phenomenon can be comprehensively predicted. In addition, novel equations predict the evolution of clouds, which are themselves a mixture of air, liquid water and vapor.
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1466560614
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: Alexander V. Kolobov
Publisher: Springer Science & Business Media
ISBN: 3642287050
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
A state-of-the-art description of metastability observed in chalcogenide alloys is presented with the accent on the underlying physics. A comparison is made between sulphur(selenium)-based chalcogenide glasses, where numerous photo-induced phenomena take place entirely within the amorphous phase, and tellurides where a reversible crystal-to-amorphous phase-change transformation is a major effect. Applications of metastability in devices¿optical memories and nonvolatile electronic phase-change random-access memories among others are discussed, including the latest trends. Background material essential for understanding current research in the field is also provided.
Author:
Publisher: Elsevier
ISBN: 0444640630
Category : Technology & Engineering
Languages : en
Pages : 862
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Book Description
Handbook of Thermal Analysis and Calorimetry: Recent Advances, Techniques and Applications, Volume Six, Second Edition, presents the latest in a series that has been well received by the thermal analysis and calorimetry community. This volume covers recent advances in techniques and applications that complement the earlier volumes. There has been tremendous progress in the field in recent years, and this book puts together the most high-impact topics selected for their popularity by new editors Sergey Vyazovkin, Nobuyoshi Koga and Christoph Schick—all editors of Thermochimica Acta. Among the important new techniques covered are biomass conversion; sustainable polymers; polymer nanocompsoties; nonmetallic glasses; phase change materials; propellants and explosives; applications to pharmaceuticals; processes in ceramics, metals, and alloys; ionic liquids; fast-scanning calorimetry, and more. - Features 19 all-new chapters to bring readers up to date on the current status of the field - Provides a broad overview of recent progress in the most popular techniques and applications - Includes chapters authored by a recognized leader in each field and compiled by a new team of editors, each with at least 20 years of experience in the field of thermal analysis and calorimetry - Enables applications across a wide range of modern materials, including polymers, metals, alloys, ceramics, energetics and pharmaceutics - Overviews the current status of the field and summarizes recent progress in the most popular techniques and applications
Author: Hiroshi Ishiwara
Publisher: Springer Science & Business Media
ISBN: 9783540407188
Category : Computers
Languages : en
Pages : 316
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Book Description
The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Author: Michael E. Auer
Publisher: Springer
ISBN: 3030231623
Category : Technology & Engineering
Languages : en
Pages : 869
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Book Description
This book constitutes the proceedings of the 16th International Conference on Remote Engineering and Virtual Instrumentation (REV), held at the BMS College of Engineering, Bangalore, India on 3–6 February 2019. Today, online technologies are at the core of most fields of engineering, as well as of society as a whole, and are inseparably connected with Internet of Things, cyber-physical systems, collaborative networks and grids, cyber cloud technologies, service architectures, to name but a few. Since it was first held in, 2004, the REV conference has focused on the increasing use of the Internet for engineering tasks and the problems surrounding it. The 2019 conference demonstrated and discussed the fundamentals, applications and experiences in the field of online engineering and virtual instrumentation. It also presented guidelines for university-level courses on these topics, in view of the increasing globalization of education and the demand for teleworking, remote services and collaborative working environments.
