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Author: Fawad H. Ismail
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is obtained in the misalignment analysis, according to which overlap with source increases the drain current, even in the presence of drain underlap. Misalignment can be tolerable in devices up to a certain extent depending on the application. High- dielectrics and small oxide thickness are shown to improve the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared to a conventional MOSFET of the same dimensions and materials is shown to be signi cant. Main features of the full band quantum-corrected Monte Carlo simulator are delineated and its signi cance at the mesoscopic scale is discussed. Finally recent research on electrothermal analysis is reviewed and its importance in relation to the current work is explained. An outline of possible future work is presented for both the simulator and the device.
Author: Fawad H. Ismail
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of the double gate silicon MOSFET device, using MoCa, the Monte Carlo simulator. Drain current performance is analyzed as a result of varying di erent parameters like oxide thickness, dielectric constant, and misalignment of top and bottom gates. An interesting result is obtained in the misalignment analysis, according to which overlap with source increases the drain current, even in the presence of drain underlap. Misalignment can be tolerable in devices up to a certain extent depending on the application. High- dielectrics and small oxide thickness are shown to improve the current drive. Comparison is made between quantum-corrected and classical simulation results. Change in potential and concentration pro les in the quantum-corrected simulation is the result of coupling between the Schr odinger and the Poisson equations. The drain current increase compared to a conventional MOSFET of the same dimensions and materials is shown to be signi cant. Main features of the full band quantum-corrected Monte Carlo simulator are delineated and its signi cance at the mesoscopic scale is discussed. Finally recent research on electrothermal analysis is reviewed and its importance in relation to the current work is explained. An outline of possible future work is presented for both the simulator and the device.
Author: Alamgir Imtiaz
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659280450
Category :
Languages : en
Pages : 60
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Book Description
The scaling of MOSFETs as dictated by the ITRS has continued unabated for many years and enabled the worldwide semiconductor market to grow at a phenomenal rate. However, the ITRS scaling is reaching hard limitations. One of the most significant problems is the maintenance of electrostatic integrity, which demands the use of extremely thin gate oxides to provide the required high gate capacitance, as well as the use of high channel doping to control short channel effects. These requirements lead to low device performance and tunneling current becomes quite prominent. This book introduces a promising solution to these problems, that is Double Gate MOSFET with high-k gate stack. This book provides an elaborate performance analysis of DG MOSFET with high-k material on both top and bottom gate stack in terms of drain current & subthreshold characteristics using 2D quantum simulator nanoMOS 4.0.
Author: Damien Querlioz
Publisher: John Wiley & Sons
ISBN: 1118618440
Category : Technology & Engineering
Languages : en
Pages : 191
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Book Description
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.
Author: David Esseni
Publisher: Cambridge University Press
ISBN: 1139494384
Category : Technology & Engineering
Languages : en
Pages : 489
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Book Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author: Serge Luryi
Publisher: John Wiley & Sons
ISBN: 047064933X
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion.
Author: S. Hall
Publisher: Springer Science & Business Media
ISBN: 1402063784
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author: Frank Schwierz
Publisher: Pan Stanford Publishing
ISBN: 9814241083
Category : Technology & Engineering
Languages : en
Pages : 349
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Book Description
This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Author: Neha Agarwal
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659246876
Category :
Languages : en
Pages : 56
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Book Description
Double gate MOSFET is widely used for sub-50nm technology of transistor design .They have immunity to short channel effects, reduced leakage current and high scaling potential. The single gate Silicon-on-insulator (SOI) devices give improved circuit speed and power consumption .But as the transistor size is reduced the close proximity between source and drain reduces the ability of the gate electrode to control the flow of current and potential distribution in the channel. To reduce SCE we need increase gate to channel coupling with respect to source/drain to channel coupling. This book presents the compact modeling of long channel undoped and doped symmetric double-gate MOSFET. The formulation starts with the solution of Poisson's equation which is then coupled to the Pao-Sah current equation to obtain the analytical drain-current model in terms of carrier concentration. The performance analysis of both the doped and undoped body symmetric DGMOS is done by using the model . Comparison of the two types of DGMOS is also done on the basis their electrical characteristics.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670220
Category : Science
Languages : en
Pages : 432
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Achinta Baidya
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659149511
Category :
Languages : en
Pages : 76
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Book Description
The aggressive scaling of the CMOS technology in the deep submicrometer regime gives rise to the short channel effects(SCEs). The double gate or multi-gate devices provide a better scalability option due to its excellent immunity to short-channel effects. This work focuses on the performance analysis of ultra-thin body Triple Metal Double Gate(TM-DG) MOSFET implemented with the high-k dielectric in gate oxide. The TMDG MOSFETs and its electrical characteristics variation especially short channel effects(SCEs) have been simulated and analyzed. optimal doping in the channel region can provide a better device performance in terms of drive current, ION/IOFF ratio, etc., keeping the SCEs within reasonable limits. The above device has been optimized with TCAD (Sentaurus TCAD)simulations and it has been found that the TMDG MOSFETs offers better transconductance, subthreshold swing, ION/IOFF ratio in sub 100 nm regimes as compared to the conventional DG MOSFETs.
