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Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Author: E.I. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1489925600
Category : Technology & Engineering
Languages : en
Pages : 377
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Book Description
Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Author: E. Givargizov
Publisher: Springer Science & Business Media
ISBN: 1461571227
Category : Science
Languages : en
Pages : 196
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Book Description
The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Author: A.A. Chernov
Publisher: Springer Science & Business Media
ISBN: 3642818358
Category : Technology & Engineering
Languages : en
Pages : 538
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Book Description
Early in this century, the newly discovered x-ray diffraction by crystals made a complete change in crystallography and in the whole science of the atomic structure of matter, thus giving a new impetus to the development of solid-state physics. Crystallographic methods, pri marily x-ray diffraction analysis, penetrated into materials sciences, mol ecular physics, and chemistry, and also into many other branches of science. Later, electron and neutron diffraction structure analyses be came important since they not only complement x-ray data, but also supply new information on the atomic and the real structure of crystals. Electron microscopy and other modern methods of investigating mat ter-optical, electronic paramagnetic, nuclear magnetic, and other res onance techniques-yield a large amount of information on the atomic, electronic, and real crystal structures. Crystal physics has also undergone vigorous development. Many re markable phenomena have been discovered in crystals and then found various practical applications. Other important factors promoting the development of crystallog raphy were the elaboration of the theory of crystal growth (which brought crystallography closer to thermodynamics and physical chem istry) and the development of the various methods of growing synthetic crystals dictated by practical needs. Man-made crystals became increas ingly important for physical investigations, and they rapidly invaded technology. The production . of synthetic crystals made a tremendous impact on the traditional branches: the mechanical treatment of mate rials, precision instrument making, and the jewelry industry.
Author: Tom Kuech
Publisher: Elsevier
ISBN: 0444633057
Category : Science
Languages : en
Pages : 1384
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Book Description
Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author: Jef Poortmans
Publisher: John Wiley & Sons
ISBN: 0470091266
Category : Science
Languages : en
Pages : 504
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Book Description
Thin-film solar cells are either emerging or about to emerge from the research laboratory to become commercially available devices finding practical various applications. Currently no textbook outlining the basic theoretical background, methods of fabrication and applications currently exist. Thus, this book aims to present for the first time an in-depth overview of this topic covering a broad range of thin-film solar cell technologies including both organic and inorganic materials, presented in a systematic fashion, by the scientific leaders in the respective domains. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and applications of novel photovoltaic devices.
Author: Peter Capper
Publisher: John Wiley & Sons
ISBN: 9780470319499
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.
Author: Edson Roberto Leite
Publisher: Springer Science & Business Media
ISBN: 1461413087
Category : Science
Languages : en
Pages : 101
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Book Description
Since the size, shape, and microstructure of nanocrystalline materials strongly impact physical and chemical properties, the development of new synthetic routes to nanocrystals with controlled composition and morphology is a key objective of the nanomaterials community. This objective is dependent on control of the nucleation and growth mechanisms that occur during the synthetic process, which in turn requires a fundamental understanding of both classical nucleation and growth and non-classical growth processes in nanostructured materials. Recently, a novel growth process called Oriented Attachment (OA) was identified which appears to be a fundamental mechanism during the development of nanoscale materials. OA is a special case of aggregation that provides an important route by which nanocrystals grow, defects are formed, and unique—often symmetry-defying—crystal morphologies can be produced. This growth mechanism involves reversible self-assembly of primary nanocrystals followed by reorientation of the assembled nanoparticles to achieve structural accord at the particle-particle interface, the removal of adsorbates and solvent molecules, and, finally, the irreversible formation of chemical bonds to produce new single crystals, twins, and intergrowths. Crystallization and Growth of Colloidal Nanocrystals provides a current understanding of the mechanisms related to nucleation and growth for use in controlling nanocrystal morphology and physical-chemical properties, and is essential reading for any chemist or materials scientist with an interest in using nanocrystals as building blocks for larger structures. This book provides a compendium for the expert reader as well as an excellent introduction for advanced undergraduate and graduate students seeking a gateway into this dynamic area of research.
Author: W. Murray Bullis
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 716
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Book Description
Author:
Publisher: ScholarlyEditions
ISBN: 1490111891
Category : Technology & Engineering
Languages : en
Pages : 1911
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Book Description
Issues in Electronics Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Radar and Sonar Research. The editors have built Issues in Electronics Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Radar and Sonar Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronics Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Author:
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 216
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Book Description
Translation of Rost kristallow; reports and interim reports of the Conference on Crystal Growth.
