Open Source TCAD/EDA for Compact Modeling PDF Download
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Author: Wladyslaw Grabinski
Publisher: Springer
ISBN: 9789402410891
Category : Technology & Engineering
Languages : en
Pages :
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Book Description
The aim of this book is to highlight the benefits of a higher interoperability between Technology Computer-Aided Design and Electronic Design Automation, focusing on specifically selected open source tools for compact modeling. Due to the tremendous developments in semiconductor technology in recent years, device level modelling and integrated circuit design have become intimately related. However, they have been traditionally disconnected up to the circuit level. This book consists of a set of extended user manuals guiding the reader from the usual software, from multidimensional numerical process and device simulations, through compact model development and its Verilog-A standardization to carefully selected IC designs for analog, radio frequency and digital applications. Bringing together contributions from academic and industrial researchers and engineers, the book forms a valuable reference for students and those working in the field.
Author: Wladyslaw Grabinski
Publisher: Springer
ISBN: 9789402410891
Category : Technology & Engineering
Languages : en
Pages :
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Book Description
The aim of this book is to highlight the benefits of a higher interoperability between Technology Computer-Aided Design and Electronic Design Automation, focusing on specifically selected open source tools for compact modeling. Due to the tremendous developments in semiconductor technology in recent years, device level modelling and integrated circuit design have become intimately related. However, they have been traditionally disconnected up to the circuit level. This book consists of a set of extended user manuals guiding the reader from the usual software, from multidimensional numerical process and device simulations, through compact model development and its Verilog-A standardization to carefully selected IC designs for analog, radio frequency and digital applications. Bringing together contributions from academic and industrial researchers and engineers, the book forms a valuable reference for students and those working in the field.
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Bejoy N Pushpakaran
Publisher: World Scientific
ISBN: 9813237848
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
Author: Simon Li
Publisher: Springer Science & Business Media
ISBN: 1461404819
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Author: Yung-Chun Wu
Publisher: Springer
ISBN: 9811030669
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Author: Sourabh Khandelwal
Publisher:
ISBN: 9783030777319
Category :
Languages : en
Pages : 0
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Book Description
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.
Author: William Liu
Publisher: Wiley-IEEE Press
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site
Author: Lining Zhang
Publisher: Springer
ISBN: 3319316532
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Author: Lukas Chrostowski
Publisher: Cambridge University Press
ISBN: 1107085454
Category : Science
Languages : en
Pages : 439
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Book Description
This hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.
Author: Paul Leroux
Publisher: MDPI
ISBN: 3039212796
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.
