Numerical Simulation of Submicron Semiconductor Devices PDF Download
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Author: Kazutaka Tomizawa
Publisher: Artech House on Demand
ISBN: 9780890066201
Category : Mathematics
Languages : en
Pages : 341
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Book Description
Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.
Author: Kazutaka Tomizawa
Publisher: Artech House on Demand
ISBN: 9780890066201
Category : Mathematics
Languages : en
Pages : 341
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Book Description
Describes the basic theory of carrier transport, develops numerical algorithms used for transport problems or device simulations, and presents real-world examples of implementation.
Author: Abel Garcia-Barrientos
Publisher:
ISBN: 9781493557257
Category :
Languages : en
Pages : 198
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Book Description
The investigation of new materials, devices and techniques to improve the performance of telecommunications, spectroscopy and radar systems applications, has caused that the study of non-stationary effects of space charge in semiconductor structures be a strategy research area in the field of high speed semiconductor devices. Therefore, this book focuses in the study of the non-stationary effects of the space charge in semiconductor structures, where the nonlinear wave interaction in active media may serve to improve the high-frequency performance of semiconductor devices.
Author: Siegfried Selberherr
Publisher: Springer Science & Business Media
ISBN: 3709166578
Category : Computers
Languages : en
Pages : 525
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Book Description
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Author: Edwin Chihchuan Kan
Publisher:
ISBN:
Category :
Languages : en
Pages : 210
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Book Description
Numerical modeling of nonstationary transport effects using partial differential equations derived from the Boltzmann Transport Equation (BTE) is investigated. Augmented drift-diffusion (ADD) models and improved energy transport (ET) models for submicron device simulation are constructed and numerically implemented. Analytical derivation of the length coefficient for the ADD models is presented for both single- and multi-valley approximations. Results of typical $nsp+ - n - nsp+$ ballistic diodes for Si and GaAs are presented. The extension of the ADD model to two dimensions is then formulated, and the implementation problems with the standard box integration method, as used in conventional drift-diffusion (DD) models, are examined. Improved ET models are derived from the zeroth and second moments of the Boltzmann transport equation and from the presumed function form of the even part of the distribution function. Energy band nonparabolicity and non-Maxwellian distribution effects are included to first order. The ET models are amenable to an efficient self-consistent discretization, with standard techniques, taking advantage of the similarity between current and energy flow equations. Numerical results for ballistic diodes and MOSFETs are presented. Typical spurious velocity overshoot spikes, obtained in conventional hydrodynamics simulations of ballistic diodes, are virtually eliminated. By comparing the formulation of the ET and HD models, we find that the spurious spike is caused by the momentum relaxation time approximation and the resulting form of the thermal diffusion terms. Calculations based on a two-carrier-population model, at the anode junction, further confirm our analysis of the spurious spike.
Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923829
Category : Technology & Engineering
Languages : en
Pages : 729
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Book Description
The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
ISBN: 3709166195
Category : Computers
Languages : en
Pages : 515
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Book Description
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Author: Mike Gault
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 0
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Book Description
Author: Sumantri Slamet
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 64
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Book Description
Author: Christopher M. Snowden
Publisher: World Scientific
ISBN: 9789810236939
Category : Science
Languages : en
Pages : 242
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Book Description
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
