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Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 9814745774
Category : Science
Languages : en
Pages : 549
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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 9814745774
Category : Science
Languages : en
Pages : 549
Get Book Here
Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author: Fumitaro Ishikawa
Publisher: CRC Press
ISBN: 1315340720
Category : Science
Languages : en
Pages : 420
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Book Description
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author:
Publisher: Academic Press
ISBN: 0128151404
Category : Science
Languages : en
Pages : 550
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Book Description
Nanowires for Energy Applications, Volume 98, covers the latest breakthrough research and exciting developments in nanowires for energy applications. This volume focuses on various aspects of Nanowires for Energy Applications, presenting interesting sections on Electrospun semiconductor metal oxide nanowires for energy and sensing applications, Integration into flexible and functional materials, Nanowire Based Bulk Heterojunction Solar Cells, Semiconductor Nanowires for Thermoelectric Generation, Energy Scavenging: Mechanical, Thermoelectric, and Nanowire synthesis/growth methods, and more. Features the latest breakthroughs and research and development in nanowires for energy applications Covers a broad range of topics, including a wide variety of materials and many important aspects of solar fuels Includes in-depth discussions on materials design, growth and synthesis, engineering, characterization and photoelectrochemical studies
Author: Naoki Fukata
Publisher: Springer Nature
ISBN: 9811590508
Category : Technology & Engineering
Languages : en
Pages : 454
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Book Description
This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
Author: Zhong Lin Wang
Publisher: Springer Science & Business Media
ISBN: 0387287450
Category : Technology & Engineering
Languages : en
Pages : 482
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Book Description
Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires.
Author:
Publisher: Academic Press
ISBN: 0128030445
Category : Technology & Engineering
Languages : en
Pages : 326
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Book Description
Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Contains comments from leading contributors in the field semiconductor nanowires Provides reviews of the most important recent literature Presents a broad view, including an examination of semiconductor nanowires Comprises up to date advancements in the technological development of nanowire devices and systems, and is comprehensive enough to be used as a reference book on nanowires as well as a graduate student text book
Author: Vijay B. Pawade
Publisher: Woodhead Publishing
ISBN: 0128240636
Category : Technology & Engineering
Languages : en
Pages : 461
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Book Description
Nanoscale Compound Semiconductors and their Optoelectronics Applications provides the basic and fundamental properties of nanoscale compound semiconductors and their role in modern technological products. The book discusses all important properties of this important category of materials such as their optical properties, size-dependent properties, and tunable properties. Key methods are reviewed, including synthesis techniques and characterization strategies. The role of compound semiconductors in the advancement of energy efficient optoelectronics and solar cell devices is also discussed. The book also touches on the photocatalytic property of the materials by doping with graphene oxides--an emerging and new pathway. Covers all relevant types of nanoscale compound semiconductors for optoelectronics, including their synthesis, properties and applications Provides historical context and review of emerging trends in semiconductor technology, particularly emphasizing advances in non-toxic semiconductor materials for green technologies Reviews emerging applications of nanoscale compound semiconductor-based devices in optoelectronics, energy and environmental sustainability
Author:
Publisher: Academic Press
ISBN: 0128041447
Category : Technology & Engineering
Languages : en
Pages : 424
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Book Description
Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literature Contains a broad view, including examination of semiconductor nanowires
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Jie Xiang
Publisher: Royal Society of Chemistry
ISBN: 1849738157
Category : Science
Languages : en
Pages : 463
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Book Description
A timely reference from leading experts on semiconductor nanowires and their applications.
