Nonvolatile Semiconductor Memory Technology PDF Download
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Author: William D. Brown
Publisher: Wiley-IEEE Press
ISBN:
Category : Computers
Languages : en
Pages : 624
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Book Description
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
Author: William D. Brown
Publisher: Wiley-IEEE Press
ISBN:
Category : Computers
Languages : en
Pages : 624
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Book Description
This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.
Author: Ashok K. Sharma
Publisher: Wiley-IEEE Press
ISBN: 9780780310001
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
Semiconductor Memories provides in-depth coverage in the areas of design for testing, fault tolerance, failure modes and mechanisms, and screening and qualification methods including. * Memory cell structures and fabrication technologies. * Application-specific memories and architectures. * Memory design, fault modeling and test algorithms, limitations, and trade-offs. * Space environment, radiation hardening process and design techniques, and radiation testing. * Memory stacks and multichip modules for gigabyte storage.
Author: Tseung-Yuen Tseng
Publisher:
ISBN: 9781588832504
Category : Flash memories (Computers)
Languages : en
Pages :
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Book Description
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Charles Ching-Hsiang Hsu
Publisher: World Scientific
ISBN: 9814460915
Category : Technology & Engineering
Languages : en
Pages : 319
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Book Description
Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance? This book is written to help you. It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book. This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits. All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1466560614
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Author: Yuan Xie
Publisher: Springer Science & Business Media
ISBN: 144199551X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Author: Joe Brewer
Publisher: John Wiley & Sons
ISBN: 1118211626
Category : Technology & Engineering
Languages : en
Pages : 766
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Book Description
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Author: Shimeng Yu
Publisher: CRC Press
ISBN: 1000567613
Category : Technology & Engineering
Languages : en
Pages : 249
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Book Description
This book covers semiconductor memory technologies from device bit-cell structures to memory array design with an emphasis on recent industry scaling trends and cutting-edge technologies. The first part of the book discusses the mainstream semiconductor memory technologies. The second part of the book discusses the emerging memory candidates that may have the potential to change the memory hierarchy, and surveys new applications of memory technologies for machine/deep learning applications. This book is intended for graduate students in electrical and computer engineering programs and researchers or industry professionals in semiconductors and microelectronics. Explains the design of basic memory bit-cells including 6-transistor SRAM, 1-transistor-1-capacitor DRAM, and floating gate/charge trap FLASH transistor Examines the design of the peripheral circuits including the sense amplifier and array-level organization for the memory array Examines industry trends of memory technologies such as FinFET based SRAM, High-Bandwidth-Memory (HBM), 3D NAND Flash, and 3D X-point array Discusses the prospects and challenges of emerging memory technologies such as PCM, RRAM, STT-MRAM/SOT-MRAM and FeRAM/FeFET Explores the new applications such as in-memory computing for AI hardware acceleration.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
