Nonvolatile Memory Devices with Colloidal, 1.0 Nm Silicon Nanoparticles PDF Download
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Author: Osama Munir Nayfeh
Publisher:
ISBN:
Category :
Languages : en
Pages : 210
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Book Description
(Cont.) Energy band analysis was used to understand the nature of charging, hole-type versus electron-type and pure hole-type charging was shown to occur due to the characteristics of ultra-small silicon nanoparticles: large energy gap, large charging energy, and consequently small electron affinity. The retention time behavior of the 1.0 nm nanoparticle device was shown to be reduced due to a reduced valence band-offset with SiO2, however the programming time is shown to be dramatically reduced over that of conventional bulk devices. Quantum mechanical tunneling calculations were used to explore and predict routes for increasing the retention behavior by modulating the tunneling distance and experimental devices based on these calculations were fabricated in the SiO2 system to study experimentally directly these dependencies.
Author: Osama Munir Nayfeh
Publisher:
ISBN:
Category :
Languages : en
Pages : 210
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Book Description
(Cont.) Energy band analysis was used to understand the nature of charging, hole-type versus electron-type and pure hole-type charging was shown to occur due to the characteristics of ultra-small silicon nanoparticles: large energy gap, large charging energy, and consequently small electron affinity. The retention time behavior of the 1.0 nm nanoparticle device was shown to be reduced due to a reduced valence band-offset with SiO2, however the programming time is shown to be dramatically reduced over that of conventional bulk devices. Quantum mechanical tunneling calculations were used to explore and predict routes for increasing the retention behavior by modulating the tunneling distance and experimental devices based on these calculations were fabricated in the SiO2 system to study experimentally directly these dependencies.
Author: Ammar Nayfeh
Publisher: Elsevier
ISBN: 012822343X
Category : Science
Languages : en
Pages : 192
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Book Description
Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices
Author: Ibrahim (Abe) M. Elfadel
Publisher: Springer
ISBN: 3319204815
Category : Technology & Engineering
Languages : en
Pages : 354
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Book Description
This book explains for readers how 3D chip stacks promise to increase the level of on-chip integration, and to design new heterogeneous semiconductor devices that combine chips of different integration technologies (incl. sensors) in a single package of the smallest possible size. The authors focus on heterogeneous 3D integration, addressing some of the most important challenges in this emerging technology, including contactless, optics-based, and carbon-nanotube-based 3D integration, as well as signal-integrity and thermal management issues in copper-based 3D integration. Coverage also includes the 3D heterogeneous integration of power sources, photonic devices, and non-volatile memories based on new materials systems.
Author: Writam Banerjee
Publisher: CRC Press
ISBN: 1040119107
Category : Technology & Engineering
Languages : en
Pages : 683
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Book Description
In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.
Author:
Publisher: Elsevier
ISBN: 0128133589
Category : Technology & Engineering
Languages : en
Pages : 608
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Book Description
Colloidal Metal Oxide Nanoparticles: Synthesis, Characterization and Applications is a one-stop reference for anyone with an interest in the fundamentals, synthesis and applications of this interesting materials system. The book presents a simple, effective and detailed discussion on colloidal metal oxide nanoparticles. It begins with a general introduction of colloidal metal oxide nanoparticles, then delves into the most relevant synthesis pathways, stabilization procedures, and synthesis and characterization techniques. Final sections discuss promising applications, including bioimaging, biosensing, diagnostic, and energy applications—i.e., solar cells, supercapacitors and environment applications—i.e., the treatment of contaminated soil, water purification and waste remediation. Provides the most comprehensive resource on the topic, from fundamentals, to synthesis and characterization techniques Presents key applications, including biomedical, energy, electronic and environmental Discusses the most relevant techniques for synthesis, patterning and characterization
Author: Michele L. Ostraat
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 474
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Book Description
Author: Barbara de Salvo
Publisher: Wiley-ISTE
ISBN: 9781848211056
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different “evolutionary paths” based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. “Disruptive paths” are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author: Writam Banerjee
Publisher: CRC Press
ISBN: 1351203258
Category : Science
Languages : en
Pages : 534
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Book Description
In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 416
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Poh Choon Ooi
Publisher:
ISBN:
Category : Ferroelectric storage cells
Languages : en
Pages : 240
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Book Description
Many recent studies have been conducted on optically transparent and mechanically flexible polymer memory devices due to its additional benefits in comparison to conventional electronic devices for various applications, such as vision-free products, see-through electronic devices; head-up displays, and produces a class of system-on-glass for use in see through and flexible electronic devices. There are numerous studies on transparent and flexible non-volatile memory (NVM) based on organic thin film transistor (OTFT) using different charge trap mediums. Although some promising results have been achieved in OTFT study, however, the fabrication process is complicated with many stacking layers to achieve the bistable memory effect with three-terminal contacts to operate the transistors. Therefore, for simplicity and ease in fabrication while achieving the bistable memory effect, the transparent and flexible organic bistable device (OBD) has been designed as metal-insulator-semiconductor (MIS) structure with two-terminal contacts to operate the device and using metal nanoparticles as charge trap medium has been of interest lately. The advantages of metallic nanoparticles storage layers stem from the large work functions difference with Si substrate, which ensures deep potential wells that enhance carrier confinement; hence avoiding retention loss. In addition, noble metals such as gold do not oxidize and do not react with the surrounding dielectric layers. Hence, a simple fabrication route using a simple solution process to construct a large area, optically transparent and flexible memory based on MIS structure with embedded AuNPs is proposed in this study. The preliminary study has begun with the fabrication of opaque and rigid MIS memory devices using p-type Si substrate. The organic-inorganic (hybrid) dielectric polymethylsilsesquioxane (PMSSQ) embedded with gold nanoparticles (AuNPs) are used as the insulator layer and charge storage medium in the MIS structure. The use of polymer materials as insulator layer is driven by the possibility of enabling new applications in flexible and transparent electronic devices. Polymer materials offer an alternative fabrication process for the large area electronics, because it provides simpler process, lower cost, and higher throughput, compared with the vacuumdeposition- based process. In this preliminary study, spin-coating method is used to deposit the PMSSQ and AuNPs in polymer host. Subsequently, the electrical characterization has been performed on a MIS NVM device to understand the transport mechanisms through thin insulator and proposed. Although some promising memory characteristics have been obtained from preliminary study; however, spin-coating deposition of AuNPs in the polymer host results in high percentage of non-operational non-volatile memory devices due to the non-uniformly distributed AuNPs attributed to the centrifugal force during spin-coating. Therefore, a novel hydrothermally grown AuNPs directly on the Si substrate has been proposed to improve the distribution of AuNPs. Then, the research proceeds to realize transparent and flexible NVM devices using a simple solution process. Here, the MIS stacking structure is constructed on the flexible indium-tin-oxide (ITO) coated polyethylene terephthalate (PET) as a bottom transparent and conducting electrode, and the replacement of p-Si substrate with pentacene as an active layer. However, they also suffer non-uniformity in AuNPs due to spin-coating of PMSSQ. Lastly in an attempt to achieve non-volatile memory devices based on simple metal-insulatormetal (MIM) structure, AuNPs embedded in parylene-C with two sandwiching metals were realized. Electrical characterization has been performed on these MIM devices to examine and propose the charge transport mechanisms. As a result, it has better yield of operational nonvolatile memory devices because the vapor deposition of parylene does not disturbed the AuNPs. Further the parylene deposition does not introduce thermal stress on the flexible ITO coated PET substrate.
