Nonlinear Transistor Model Parameter Extraction Techniques PDF Download
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Author: Matthias Rudolph
Publisher:
ISBN: 9781139154659
Category : Electronic circuit design
Languages : en
Pages : 352
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Book Description
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Author: Matthias Rudolph
Publisher:
ISBN: 9781139154659
Category : Electronic circuit design
Languages : en
Pages : 352
Get Book Here
Book Description
Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Author: Matthias Rudolph
Publisher: Cambridge University Press
ISBN: 1139502263
Category : Technology & Engineering
Languages : en
Pages : 367
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Book Description
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author: Gunter Kompa
Publisher: Artech House
ISBN: 1630817457
Category : Technology & Engineering
Languages : en
Pages : 609
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Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: David E. Root
Publisher: Cambridge University Press
ISBN: 1107511569
Category : Technology & Engineering
Languages : en
Pages : 237
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Book Description
This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.
Author: Richard G. Carter
Publisher: Cambridge University Press
ISBN: 1108660878
Category : Technology & Engineering
Languages : en
Pages : 844
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Book Description
Do you design and build vacuum electron devices, or work with the systems that use them? Quickly develop a solid understanding of how these devices work with this authoritative guide, written by an author with over fifty years of experience in the field. Rigorous in its approach, it focuses on the theory and design of commercially significant types of gridded, linear-beam, crossed-field and fast-wave tubes. Essential components such as waveguides, resonators, slow-wave structures, electron guns, beams, magnets and collectors are also covered, as well as the integration and reliable operation of devices in microwave and RF systems. Complex mathematical analysis is kept to a minimum, and Mathcad worksheets supporting the book online aid understanding of key concepts and connect the theory with practice. Including coverage of primary sources and current research trends, this is essential reading for researchers, practitioners and graduate students working on vacuum electron devices.
Author: Isar Mostafanezhad
Publisher: Cambridge University Press
ISBN: 1316982602
Category : Technology & Engineering
Languages : en
Pages : 288
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Book Description
In this comprehensive work, experts in the field detail recent advances in medical and biological microwave sensors and systems, with chapters on topics such as implantable sensors, wearable microwave tags, and UWB technology. Each chapter explores the theory behind the technology, as well as its design and implementation. This is supported by practical examples and details of experimental results, along with discussion of system design, design trade-offs, and possible constraints and manufacturing issues. Applications described include intracranial pressure monitoring, vital signs monitoring, and non-invasive molecular and cellular investigations. Presenting new research and advances in the field, and focusing on the state of the art in medical and biological microwave sensors, this work is an invaluable resource for enthusiastic researchers and practicing engineers in the fields of electrical engineering, biomedical engineering, and medical physics.
Author: Giovanni Ghione
Publisher: Cambridge University Press
ISBN: 131676706X
Category : Technology & Engineering
Languages : en
Pages : 600
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Book Description
Drawing on over twenty years of teaching experience, this comprehensive yet self-contained text provides an in-depth introduction to the field of integrated microwave electronics. Ideal for a first course on the subject, it covers essential topics such as passive components and transistors, linear, low-noise and power amplifiers, and microwave measurements. An entire chapter is devoted to CAD techniques for analysis and design, covering examples of easy-to-medium difficulty for both linear and non-linear subsystems, and supported online by ADS and AWR project files. More advanced topics are also covered, providing an up-to-date overview of compound semiconductor technologies and treatment of electromagnetic issues and models. Readers can test their knowledge with end-of-chapter questions and numerical problems, and solutions and lecture slides are available online for instructors. This is essential reading for graduate and senior undergraduate students taking courses in microwave, radio-frequency and high-frequency electronics, as well as professional microwave engineers.
Author: Inder Bahl
Publisher: John Wiley & Sons
ISBN: 9780470462317
Category : Technology & Engineering
Languages : en
Pages : 696
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Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Author: Giovanni Crupi
Publisher: Academic Press
ISBN: 0124045928
Category : Technology & Engineering
Languages : en
Pages : 481
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Book Description
This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: - The theoretical background of high-frequency de-embedding for measurements, modelling, and design - Details on applying the de-embedding concept to the transistor's linear, non-linear, and noise behaviour - The impact of de-embedding on low-noise and power amplifier design - The recent advances and future trends in the field of high-frequency de-embedding - Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends - Written by experts in the field, all of whom are leading researchers in the area - Each chapter describes theoretical background and gives experimental results and practical applications - Includes forewords by Giovanni Ghione and Stephen Maas
Author: Ferdinandas Vaitiekūnas
Publisher: Cambridge Scholars Publishing
ISBN: 1527592588
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
This book presents the theory of large-signal nonlinear impulse processes occurring in bipolar and field-effect transistors with a Schottky gate, collapse TRAPATT and tunnel diodes, superlattices, and double heterojunction lasers. It evaluates the maximum speed of impulse operation of these elements and experimentally constructs the generation of pulse oscillations with a repetition frequency of up to 1, 2 and 4 GHz. Original or adapted methods of mathematical modeling of processes provide an opportunity to obtain quantitative dependencies of generated pulse parameters, while the book also details the synchro-photon effect. In addition, as shown here, when a semiconductor element is switched on by an electric pulse, and at the same time a pulse of photons synchronously illuminates it, an effect occurs which increases the switching speed of the element by an order of magnitude. At the same time, the switching transient characteristic is shortened by 10 times or more. After applying this effect in pulse generators in the gigahertz frequency range, an increase in the repetition frequency of the generated oscillations is possible.
