Theory of Transport Properties of Semiconductor Nanostructures PDF Download
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Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 1461558077
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author: Eckehard Schöll
Publisher: Springer Science & Business Media
ISBN: 1461558077
Category : Technology & Engineering
Languages : en
Pages : 394
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Book Description
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author: Y Arakawa
Publisher: CRC Press
ISBN: 9780750308564
Category : Science
Languages : en
Pages : 908
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Book Description
An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical devices, magnetic materials, novel systems, quantum transport, optical characterization, quantum nanostructures, and material growth and characterization. The content encompasses the development of optical and electronic devices based on nitride semiconductors as well as the steady advances in traditional topics like III-V-based electronic and optical devices, growth and processing, and characterization. The book also includes novel research trends in quantum structures, such as quantum wires and dots, and spintronics, which are very promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications, this resource is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry, and electronic and electrical engineering.
Author: David D. Awschalom
Publisher: Springer Science & Business Media
ISBN: 9401705321
Category : Science
Languages : en
Pages : 216
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Book Description
The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.
Author: Wolfgang Jantsch
Publisher: American Institute of Physics
ISBN: 9780735403970
Category : Science
Languages : en
Pages : 782
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Book Description
This book features peer-reviewed papers that were presented at the 28th International Conference on the Physics of Semiconductors. This biannual conference presents and discusses all important developments and outstanding recent results in the field of semiconductor physics: one of the most important disciplines in solid state physics. Semiconductor physics provides the scientific basis for the microelectronic device industry.
Author: Chihiro Hamaguchi
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 684
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Book Description
The proceedings of the 7th International Conference on [title] held in Nara, Japan, July 1992, comprise three plenary, 25 invited, and 148 contributed papers in the areas of: electron-phonon interaction, confined phonon modes, optical study of ultrafast processes, heterostructures/low dimensional transport, hot carrier scattering and relaxation, tr.
Author: Sebastian Volz
Publisher: Springer Science & Business Media
ISBN: 3642042589
Category : Science
Languages : en
Pages : 597
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Book Description
Heat transfer laws for conduction, radiation and convection change when the dimensions of the systems in question shrink. The altered behaviours can be used efficiently in energy conversion, respectively bio- and high-performance materials to control microelectronic devices. To understand and model those thermal mechanisms, specific metrologies have to be established. This book provides an overview of actual devices and materials involving micro-nanoscale heat transfer mechanisms. These are clearly explained and exemplified by a large spectrum of relevant physical models, while the most advanced nanoscale thermal metrologies are presented.
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 868
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Book Description
Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1248
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Book Description
Author: Ōsaka Shiritsu Daigaku. Kōgakubu
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 372
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Book Description
Author: British Library. Document Supply Centre
Publisher:
ISBN:
Category : Conference proceedings
Languages : en
Pages : 870
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Book Description
