Author: National Semiconductor Corporation
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 310
Book Description
Non-volatile Memory Databook
Author: National Semiconductor Corporation
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 310
Book Description
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 310
Book Description
Specialty Memory Data Book 1998
Author:
Publisher:
ISBN:
Category : Random access memory
Languages : en
Pages : 988
Book Description
Publisher:
ISBN:
Category : Random access memory
Languages : en
Pages : 988
Book Description
High Performance Memories
Author: Betty Prince
Publisher: John Wiley & Sons
ISBN: 0471986100
Category : Technology & Engineering
Languages : en
Pages : 371
Book Description
Die Bandbreite und Zugriffszeit traditioneller DRAMs reicht nicht mehr aus, um mit der Geschwindigkeit moderner Mikroprozessoren Schritt zu halten. Daher baut man verstärkt Hochleistungs-Speicherchips, deren neue Generation das Thema dieses Buches bildet. Die Autorin, eine international anerkannte Spezialistin, diskutiert objektiv und herstellerunabhängig Technologien wie DDR DRAMs, CiDDR DRAMs, SL=DRAM, Direct Rambus, SSTL Interfaces und MP-DRAMs. Der aktuellste verfügbare Beitrag zu einem enorm wichtigen Thema! (12/98)
Publisher: John Wiley & Sons
ISBN: 0471986100
Category : Technology & Engineering
Languages : en
Pages : 371
Book Description
Die Bandbreite und Zugriffszeit traditioneller DRAMs reicht nicht mehr aus, um mit der Geschwindigkeit moderner Mikroprozessoren Schritt zu halten. Daher baut man verstärkt Hochleistungs-Speicherchips, deren neue Generation das Thema dieses Buches bildet. Die Autorin, eine international anerkannte Spezialistin, diskutiert objektiv und herstellerunabhängig Technologien wie DDR DRAMs, CiDDR DRAMs, SL=DRAM, Direct Rambus, SSTL Interfaces und MP-DRAMs. Der aktuellste verfügbare Beitrag zu einem enorm wichtigen Thema! (12/98)
The MOS Memory Data Book for Design Engineers, 1980
Author: Texas Instruments Incorporated
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 196
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 196
Book Description
Microcomputer D.A.T.A. Book
Author:
Publisher:
ISBN:
Category : Microcomputers
Languages : en
Pages : 770
Book Description
Publisher:
ISBN:
Category : Microcomputers
Languages : en
Pages : 770
Book Description
VHC Series Advanced CMOS Logic Databook
Author: National Semiconductor Corporation
Publisher:
ISBN:
Category : Logic circuits
Languages : en
Pages : 360
Book Description
Publisher:
ISBN:
Category : Logic circuits
Languages : en
Pages : 360
Book Description
VLSI-Design of Non-Volatile Memories
Author: Giovanni Campardo
Publisher: Springer Science & Business Media
ISBN: 9783540201984
Category : Computers
Languages : en
Pages : 616
Book Description
VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Publisher: Springer Science & Business Media
ISBN: 9783540201984
Category : Computers
Languages : en
Pages : 616
Book Description
VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Programmable Logic Data Book 1997
Author:
Publisher:
ISBN:
Category : Logic circuits
Languages : en
Pages : 824
Book Description
Publisher:
ISBN:
Category : Logic circuits
Languages : en
Pages : 824
Book Description
Advanced Peripherals
Author:
Publisher:
ISBN:
Category : Computer input-output equipment
Languages : en
Pages : 628
Book Description
Publisher:
ISBN:
Category : Computer input-output equipment
Languages : en
Pages : 628
Book Description
Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)