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Author: Thomas S. Miller
Publisher: Nova Publishers
ISBN: 9781594545757
Category : Science
Languages : en
Pages : 250
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Book Description
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components; dopant incorporation; growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; and in situ monitoring of epitaxial growth processes. Also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; and effects of operational and environmental stresses on reliability.
Author: Thomas S. Miller
Publisher: Nova Publishers
ISBN: 9781594545757
Category : Science
Languages : en
Pages : 250
Get Book Here
Book Description
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components; dopant incorporation; growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; and in situ monitoring of epitaxial growth processes. Also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; and effects of operational and environmental stresses on reliability.
Author: Dominique Persano Adorno
Publisher: Nova Science Publishers
ISBN: 9781633217553
Category : Semiconductors
Languages : en
Pages : 0
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Book Description
The world of semiconductor research is continuously expanding our knowledge of the physics governing phenomena at micro and nano scales, driving the development of new technologies and rapidly enhancing the quality of our everyday life. The huge amount of scientific papers published today in this field of research confirms the great interest of the scientific community in semiconductor science and its future applications. However, this enormous growth of available scientific information sometimes makes the familiar channels of communication considerably less effective, because of the difficulties for experts in a given field to keep up with the current literature. "Advances in Semiconductor Physics" Series has been conceived mainly to improve this situation. This monograph presents a collection of selected contributions reporting some of the most stimulating and challenging results obtained by recent researches in the field of semiconductor physics. About the same number of theoretical, experimental and simulative studies have been included in this book, driven by the basic idea that all these different types of investigations are equally important in increasing our understanding of the physics of semiconductors.
Author: Amalia Patane
Publisher: Springer Science & Business Media
ISBN: 3642233511
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.
Author: Rupam Goswami
Publisher: Springer Nature
ISBN: 981169124X
Category : Technology & Engineering
Languages : en
Pages : 313
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Book Description
This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.
Author: V. N. Murray
Publisher: Nova Publishers
ISBN: 9781594544613
Category : Science
Languages : en
Pages : 308
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Book Description
Ferromagnetism is a form of magnetism that can be acquired in an external magnetic field and usually retained in its absence, so that ferromagnetic materials are used to make permanent magnets. A ferromagnetic material may therefore be said to have a high magnetic permeability and susceptibility (which depends upon temperature). Examples are iron, cobalt, nickel, and their alloys. Ultimately, ferromagnetism is caused by spinning electrons in the atoms of the material, which act as tiny weak magnets. They align parallel to each other within small regions of the material to form domains, or areas of stronger magnetism. In an unmagnetised material, the domains are aligned at random so there is no overall magnetic effect. If a magnetic field is applied to that material, the domains align to point in the same direction, producing a strong overall magnetic effect. Permanent magnetism arises if the domains remain aligned after the external field is removed. Ferromagnetic materials exhibit hysteresis. In 2004, it was discovered that a certain allotrope of carbon, nanofoam, exhibited ferromagnetism. The effect dissipates after a few hours at room temperature, but lasts longer at cold temperatures. The material is also a semiconductor. It is thought that other similarly formed materials, of boron and nitrogen, may also be ferromagnetic. This new book rings together leading research from throughout the world.
Author: Ming Fu Li
Publisher: World Scientific
ISBN: 1908978384
Category : Technology & Engineering
Languages : en
Pages : 529
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Book Description
This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a
Author: A.G. Davis Philip
Publisher: Springer Science & Business Media
ISBN: 9401103836
Category : Science
Languages : en
Pages : 393
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Book Description
IAU Symposium No. 167 brought together researchers who use CCDs and arrays, designers and manufacturers of CCDs and Array Mosaics and those who write the software to control these devices and to reduce the large amounts of data contained in each frame. At the meeting such topics as plans for applying the new technology to the new large telescopes that have been built recently and those planned in the near future, new developments in infrared arrays, advances and concerns with the use of CCDs in photometry and spectroscopy and the creation of large mosaics in photometry and spectroscopy and the creation of large mosaics of chips which allow larger areas of the sky to be covered in a single frame were discussed. There were sessions devoted to the following topics: New Developments in CCD Technology; New Developments in IR Detector Arrays; Direct Imaging with CCDs and Other Arrays; Spectroscopy with CCDs and Other Arrays; and Large Field Imaging with Array Mosaics. Scientific results of studies made with this technology were covered in the poster sessions. CCD and Array Detectors have become the detectors of choice at all the world's optical observatories. Such instruments on small university and college telescopes have turned these telescopes into instruments that can now do observations which in the past were done only on the largest telescopes. CCDs and Arrays are known as `the people's detector' because of their ability to turn small telescopes into true research instruments. On large telescopes observations can be made of extremely faint and crowded objects that were impossible to observe before the advent of CCD and Array technology. The proceedings of this meeting will be useful to all those who are interested in the design, manufacture and use of CCDs and Arrays for astronomical observations.
Author: Alexander V. Latyshev
Publisher: Elsevier
ISBN: 0128105135
Category : Technology & Engineering
Languages : en
Pages : 553
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Book Description
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author: Thierry Djenizian
Publisher: Frontiers Media SA
ISBN: 2889636496
Category :
Languages : en
Pages : 183
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864937
Category : Technology & Engineering
Languages : en
Pages : 401
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Book Description
Solid State Physics
