Negative Differential Resistance and Instabilities in 2-D Semiconductors PDF Download
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Author: N. Balkan
Publisher: Springer Science & Business Media
ISBN: 1461528224
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.
Author: N. Balkan
Publisher: Springer Science & Business Media
ISBN: 1461528224
Category : Technology & Engineering
Languages : en
Pages : 437
Get Book
Book Description
Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.
Author: N. Balkan
Publisher:
ISBN: 9780198500582
Category : Science
Languages : en
Pages : 536
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Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.
Author: K Aoki
Publisher: CRC Press
ISBN: 1420033840
Category : Science
Languages : en
Pages : 580
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Book Description
The field of nonlinear dynamics and low-dimensional chaos has developed rapidly over the past twenty years. The principal advances have been in theoretical aspects but more recent applications in a wide variety of the sciences have been made. Nonlinear Dynamics and Chaos in Semiconductors is the first book to concentrate on specific physical and experimental situations in semiconductors as well as examine how to use chaos theory to explain semiconductor phenomena. Written by a well-respected researcher of chaos in semiconductors, Nonlinear Dynamics and Chaos in Semiconductors provides a rich and detailed account of progress in research on nonlinear effects in semiconductor physics. Discussing both theory and experiment, the author shows how this powerful combination has lead to real progress with difficult nonlinear problems in this technologically important field. Nonlinear carrier dynamics, caused by low-temperature impact ionization avalanche of impurities in extrinsic semiconductors, and the emergence of intractable chaos are treated in detail. The book explores impact ionization models, linear stability analysis, bifurcation theory, fractal dimensions, and various analytical methods in chaos theory. It also describes spatial and spatiotemporal evolution of the current density filament formed by the impact ionization avalanche.
Author: Franz-Josef Niedernostheide
Publisher: Springer Science & Business Media
ISBN: 3642795064
Category : Technology & Engineering
Languages : en
Pages : 279
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Book Description
In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices the contributions of the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment (ICPF '94) in Noordwijkerhout, held by many internationally reknown experts, are compiled. To connect the field of semiconductor physics with the theory of nonequilibrium dissipative systems, the emphasis lies on the study of localized structures, their stability and bifurcation behaviour. A point of special interest is the evolution of dynamic structures and the investigation of more complex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.
Author: J.P. Leburton
Publisher: Springer Science & Business Media
ISBN: 9401116830
Category : Science
Languages : en
Pages : 490
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Book Description
In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots.
Author: J. Timothy Londergan
Publisher: Springer Science & Business Media
ISBN: 3540479376
Category : Science
Languages : en
Pages : 222
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Book Description
have advances in of The last few seen our understanding revolutionary years heterostructures. An amount the electronic of enormous properties quantum undertaken both the and the theoretical of research has been on experimental in nanostructures. The field vast of electronic now covers a aspects transport and extensive number of review of an books, articles, spectrum topics, papers and conference continue to be in this area. published Complete proceedings of this and field is the of this book. beyond exciting evolving scope coverage We refer the interested reader to of the excellent and some comprehensive books and conference on this proceedings subject. Much has been made in our of confined understanding quantum progress A's is well it is to construct heterostruc known, possible quantum systems. tures which well as one dimensional are approximated quasi two dimensional, zero dimensional Our interest here is in the of or properties particles systems. We brief andfields in two dimensional a intro quasi (2 D) systems. provide duction to the of 2 D in to motion in 2 D systems, particular systems physics the confined within finite For we will assume that a area. simplicity, generally Such confined is defined an infinite hard wall a by potential. system boundary We will 2 D will be referred to as a or as a wire.
Author: B. K. Ridley
Publisher: Oxford University Press
ISBN: 0199677212
Category : Science
Languages : en
Pages : 449
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Book Description
This book sets out the fundamental quantum processes that are important in the physics and technology of semiconductors. The fifth edition includes three new chapters that expand the coverage of semiconductor physics relevant to its accompanying technology.
Author: Pedro Derosa
Publisher: CRC Press
ISBN: 1439810400
Category : Science
Languages : en
Pages : 310
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Book Description
While the relevant features and properties of nanosystems necessarily depend on nanoscopic details, their performance resides in the macroscopic world. To rationally develop and accurately predict performance of these systems we must tackle problems where multiple length and time scales are coupled. Rather than forcing a single modeling approach to
Author: Robin F.C. Farrow
Publisher: Springer Science & Business Media
ISBN: 1489915192
Category : Science
Languages : en
Pages : 504
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Book Description
This volume contains the papers presented at the NATO Advanced Research Workshop on "Magnetism and Structure in Systems of Reduced Dimension", held at l'Institut d'Etudes Scientifiques de Cargese - U.M.S. - C.N.R.S. - Universite de Corte Universite de Nice Sophia - Antipolis during June 15-19, 1992. The ordering of papers in the volume reflects the sequence of papers presented at the workshop. The aim was not to segregate the papers into rigidly defmed areas but to group the papers into small clusters, each cluster having a common theme. In this way the parallel, rather than serial, development of areas such as preparation of films, magnetic and structural characterization was highlighted. Indeed the success of the field depends on such parallel development and is assisted by workshops of this nature and the international collaborations which they foster. The organizers and participants of the NATO workshop express their thanks to Mme. Marie-France Hanseier and the staff at l'Institut d'Etudes Scientifiques de Cargese U.M.S. - C.N.R.S. - Universite de Corte - Universite de Nice Sophia - Antipolis for making the workshop and local arrangements a memorable success. Warm thanks are also expressed to Varadachari Sadagopan and Pascal Stefanou for their encouragement and help in making the workshop a reality. We are also grateful to Kristl Hathaway, Larry Cooper and Gary Prinz for advice in developing the workshop program.
Author: Eckehard Schöll
Publisher: Cambridge University Press
ISBN: 0521451868
Category : Mathematics
Languages : en
Pages : 422
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Book Description
This book brings together concepts from semiconductor physics, nonlinear-dynamics and chaos to examine semiconductor transport phenomena.
