Narrow-Gap Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Narrow-Gap Semiconductors PDF full book. Access full book title Narrow-Gap Semiconductors by . Download full books in PDF and EPUB format.
Author:
Publisher: Springer
ISBN: 3540395318
Category : Technology & Engineering
Languages : en
Pages : 317
Get Book Here
Book Description
Author:
Publisher: Springer
ISBN: 3540395318
Category : Technology & Engineering
Languages : en
Pages : 317
Get Book Here
Book Description
Author: Junhao Chu
Publisher: Springer Science & Business Media
ISBN: 0387748016
Category : Science
Languages : en
Pages : 613
Get Book Here
Book Description
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Author: Antoni Rogalski
Publisher: SPIE Press
ISBN: 9780819436191
Category : Science
Languages : en
Pages : 464
Get Book Here
Book Description
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Author: Junichiro Kono
Publisher: CRC Press
ISBN: 148226921X
Category : Science
Languages : en
Pages : 636
Get Book Here
Book Description
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Author: J.L Reno
Publisher: CRC Press
ISBN: 1000112403
Category : Science
Languages : en
Pages : 401
Get Book Here
Book Description
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Author: Junhao Chu
Publisher: Springer Science & Business Media
ISBN: 1441910409
Category : Technology & Engineering
Languages : en
Pages : 676
Get Book Here
Book Description
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Author: W. Zawadzki
Publisher: Springer
ISBN: 9783540102618
Category : Science
Languages : en
Pages : 574
Get Book Here
Book Description
Proceedings of the International Summer School, held in Nimes, France, September, 3-15, 1979
Author: Raymond Wolfe
Publisher: Academic Press
ISBN: 1483214702
Category : Technology & Engineering
Languages : en
Pages : 417
Get Book Here
Book Description
Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies of MIS diodes that have led to detailed understanding of the silicon-silicon dioxide interface, as well as the devices that can be fabricated by ion implantation in semiconductors are also considered. The book further tackles fundamental mechanisms of electron transport through insulating thin films; mechanisms that influence the design of many thin film; and semiconductor devices. Solid state physicists, materials scientists, electrical engineers, and graduate students working near the subjects being discussed will find the book invaluable.
Author: Kazuto Akiba
Publisher: Springer
ISBN: 9811371075
Category : Technology & Engineering
Languages : en
Pages : 165
Get Book Here
Book Description
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.
Author: S. J. Pearton
Publisher: World Scientific
ISBN: 9789810218843
Category : Technology & Engineering
Languages : en
Pages : 568
Get Book Here
Book Description
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
